It is crucial for early stage medical diagnostics to identify disease biomarkers at ultralow concentrations. A wide range of analytes can be identified using low-dimensional materials to build highly sensitive, targeted, label-free, field-effect transistor (FET) biosensors. Two-dimensional (2D) materials are preferable for high-performance biosensing because of their dramatic change in resistivity upon analyte adsorption or biomarker detection, tunable electronic properties, high surface activities, adequate stability, and layer-dependent semiconducting properties. We give a succinct overview of interesting applications for protein sensing with various architectural styles, such as 2D transition metal dichalcogenides (TMDs)-based FETs that include carbon nanotubes (CNTs), graphene (Gr), reduced graphene oxide (rGr), 2D transition-metal carbides (MXene), and Gr/MXene heterostructures. Because it might enable individuals to perform better, this review will be an important contribution to the field of medical science. These achievements demonstrate point-of-care diagnostics' abilities to detect biomarkers at ultrahigh performance levels. A summary of the present opportunities and challenges appears in the conclusion.
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http://dx.doi.org/10.1021/acssensors.3c01728 | DOI Listing |
Nano Lett
January 2025
Key Lab for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China.
One-time programmable (OTP) memory is an essential component in chips, which has extremely high security to protect the stored critical information from being altered. However, traditional OTP memory based on the thermal breakdown of the dielectric has a large programming current, which leads to high power consumption. Here, we report a gate tunneling-induced "cold" breakdown phenomenon in carbon nanotube (CNT) field-effect transistors, and based on this we construct a "cold" fuse (C-fuse) memory where applying a mild gate voltage can break down the CNT channel without damaging the gate dielectric.
View Article and Find Full Text PDFNano Lett
January 2025
Hunan Provincial Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China.
Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as WSe, are promising candidates for next-generation integrated circuits. However, the dependence of intrinsic properties of TMD devices on various processing steps remains largely unexplored. Here, using pristine p-type WSe devices as references, we comprehensively studied the influence of each step in traditional nanofabrication methods on device performance.
View Article and Find Full Text PDFAnal Chem
January 2025
State Key Laboratory of Biogeology and Environmental Geology, Engineering Research Center of Nano-Geomaterials of the Ministry of Education, Faculty of Materials Science and Chemistry, China University of Geosciences, Wuhan 430074, P. R. China.
Proteins have been one of the most important biomarkers for diagnosing diseases, and field-effect transistor (FET) biosensors possess high sensitivity; are label-free; and feature real-time detection, rapidity, and easy integration for protein detection. FET biosensors are mainly made up of FET parts, such as channel materials, and bio parts, such as receptors. This Tutorial provides an in-depth exploration of FET biosensors for protein detection from the composition perspective and discusses the commercialization of point-of-care diagnostics of proteins based on FET biosensors.
View Article and Find Full Text PDFNano Lett
January 2025
Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Göteborg, Sweden.
Semiconducting transition metal dichalcogenides (TMDs) have attracted significant attention for their potential to develop high-performance, energy-efficient, and nanoscale electronic devices. Despite notable advancements in scaling down the gate and channel length of TMD field-effect transistors (FETs), the fabrication of sub-30 nm narrow channels and devices with atomic-scale edge control still poses challenges. Here, we demonstrate a crystallography-controlled nanostructuring technique to fabricate ultranarrow tungsten disulfide (WS) nanoribbons as small as sub-10 nm in width.
View Article and Find Full Text PDFNat Commun
January 2025
School of Electronics Science and Engineering/National Laboratory of Solid-State Microstructures, Nanjing University, Nanjing, China.
Ultrathin silicon nanowires (diameter <30 nm) with strong electrostatic control are ideal quasi-1D channel materials for high-performance field effect transistors, while a short channel is desirable to enhance driving current. Typically, the patterning of such delicate channels relies on high-precision lithography, which is not applicable for large area electronics. In this work, we demonstrate that ultrathin and short silicon nanowires channels can be created through a local-curvature-modulated catalytic growth, where a planar silicon nanowires is directed to jump over a crossing step.
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