Self-powered semitransparent WS/LaVOvertical-heterostructure photodetectors by employing interfacial hexagonal boron nitride.

Two-dimensional (2D) semiconductor and LaVOmaterials with high absorption coefficients in the visible light region are attractive structures for high-performance photodetector (PD) applications. Insulating 2D hexagonal boron nitride (h-BN) with a large band gap and excellent transmittance is a very attractive material as an interface between 2D/semiconductor heterostructures. We first introduce WS/h-BN/LaVOsemitransparent PD. The photo-current/dark current ratio of the device exhibits a delta-function characteristic of 4 × 10at 0 V, meaning 'self-powered'. The WS/h-BN/LaVOPD shows up to 0.27 A Wresponsivity () and 4.6 × 10cm HzWdetectivity (*) at 730 nm. Especially, it was confirmed that the* performance improved by about 5 times compared to the WS/LaVOdevice at zero bias. Additionally, it is suggested that the PD maintains 87% of its initialfor 2000 h under the atmosphere with a temperature of 25 °C and humidity of 30%. Based on the above results, we suggest that the WS/h-BN/LaVOheterojunction is promising as a self-powered optoelectronic device.