High output performance is critical for building triboelectric nanogenerators (TENGs) for future multifunctional applications. Unfortunately, the high triboelectric charge dissipation rate has a significant negative impact on its electrical output performance. Herein, a new tribolayer is designed through introducing self-assembled molecules with large energy gaps on commercial PET fibric to form carrier deep traps, which improve charge retention while decreasing dissipation rates. The deep trap density of the PET increases by two orders of magnitude, resulting in an 86% reduction in the rate of charge dissipation and a significant increase in the charge density that can be accumulated on tribolayer during physical contact. The key explanation is that increasing the density of deep traps improves the dielectric's ability to store charges, making it more difficult for the triboelectric charges trapped by the tribolayer to escape from the deep traps, lowering the rate of charge dissipation. This TENG has a 1300% increase in output power density as a result of altering the deep trap density, demonstrating a significant improvement. This work describes a simple yet efficient method for building TENGs with ultra-high electrical output and promotes their practical implementation in the sphere of the Internet of Things.
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http://dx.doi.org/10.1002/adma.202303389 | DOI Listing |
Phys Chem Chem Phys
January 2025
Department of Electrical Engineering, Tsinghua University, Beijing, 100084, China.
As an effective method to enhance the dielectric performance of polyolefin materials, polar side group modification has been extensively applied in the insulation and energy storage materials of electrical and electronic systems. In this work, two side groups with different topological structures were adopted, namely, vinyl acetate (VAc, aliphatic chain) and -vinyl-pyrrolidone (NVP, saturated ring), to modify polypropylene (PP) chemical grafting, and the effects of structural topology of the polar side group on the microscopic and macroscopic characteristics of PP, particularly on its electrical anti-breakdown ability, were investigated. Experimental results showed that the side group structural topology directly affected the crystallization and thermal properties of PP.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of UV Light Emitting Materials and Technology, Ministry of Education, Northeast Normal University, Changchun, 130024, China.
In this study an (AlGa)O barrier layer is inserted between β-GaO and GaN in a p-GaN/n-GaO diode photodetector, causing the dark current to decrease considerably, and device performance to improve significantly. The β-GaO/β-(AlGa)O/GaN n-type/Barrier/p-type photodetector achieves a photocurrent gain of 1246, responsivity of 237 A W, and specific detectivity of 5.23 × 10 cm Hz W under a bias of -20 V.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Engineering Research Center of Optical Instrument and System, Ministry of Education and Shanghai Key Lab of Modern Optical System, University of Shanghai for Science and Technology, No. 516 Jungong Road, Shanghai 200093, China.
Electron-trapping materials have attracted a lot of attention in the field of optical data storage. However, the lack of suitable trap levels has hindered its development and application in the field of optical data storage. Herein, LuAlO:Ce fluorescent ceramics were developed as the optical storage medium, and high-temperature vacuum sintering induced the formation of deep traps (1.
View Article and Find Full Text PDFPolymers (Basel)
January 2025
Faculty of Materials Science and Engineering, Kyoto Institute of Technology, Sakyo, Kyoto 606-8585, Japan.
The transient dynamics of photocurrents for poly((4-diphenylamino)benzyl acrylate) (PDAA)-based photorefractive (PR) polymers sensitized with perylene bisimide derivative N,N'-diisopropylphenyl-1,6,7,12-tetrachloroperylene-3,4,9,10-tetracarboxyl bisimide (PBI) at various composition ratios were studied. The PR polymer included (4-(diphenylamino)phenyl)methanol (TPAOH) photoconductive plasticizer and (4-(azepan-1-yl)-benzylidene) malononitrile nonlinear optical dye as well, which are needed for inducing PR effects. All the photocurrents measured at 640 nm were well simulated by a two-trapping site model considering photocarrier generation and recombination processes of the charge transfer (CT) complex between PBI and PDAA.
View Article and Find Full Text PDFACS Nano
January 2025
BK21 Graduate Program in Intelligent Semiconductor Technology, Seoul 03722, Republic of Korea.
MoS, one of the most researched two-dimensional semiconductor materials, has great potential as the channel material in dynamic random-access memory (DRAM) due to the low leakage current inherited from the atomically thin thickness, high band gap, and heavy effective mass. In this work, we fabricate one-transistor-one-capacitor (1T1C) DRAM using chemical vapor deposition (CVD)-grown monolayer (ML) MoS in large area and confirm the ultralow leakage current of approximately 10 A/μm, significantly lower than the previous report (10 A/μm) in two-transistor-zero-capacitor (2T0C) DRAM based on a few-layer MoS flake. Through rigorous analysis of leakage current considering thermionic emission, tunneling at the source/drain, Shockley-Read-Hall recombination, and trap-assisted tunneling (TAT) current, the TAT current is identified as the primary source of leakage current.
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