We elucidate the flexoelectricity of semiconductors in the high strain gradient regime, the underlying mechanism of which is less understood. By using the generalized Bloch theorem, we uncover a strong flexoelectric-like effect in bent thinfilms of Si and Ge due to a high-strain-gradient-induced band gap closure. We show that an unusual type-II band alignment is formed between the compressed and elongated sides of the bent film. Therefore, upon the band gap closure, electrons transfer from the compressed side to the elongated side to reach the thermodynamic equilibrium, leading to a pronounced change of polarization along the film thickness dimension. The obtained transverse flexoelectric coefficients are unexpectedly high with a quadratic dependence on the film thickness. This new mechanism is extendable to other semiconductor materials with moderate energy gaps. Our findings have important implications for the future applications of flexoelectricity in semiconductor materials.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1021/acs.nanolett.3c04220 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Phase transitions, Dirac and Weyl semimetal states in MnGeBiTe.
Sci Rep
January 2025
Saint Petersburg State University, St. Petersburg, 198504, Russia.
Using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), an experimental and theoretical study of changes in the electronic structure (dispersion dependencies) and corresponding modification of the energy band gap at the Dirac point (DP) for topological insulator (TI) [Formula: see text] have been carried out with gradual replacement of magnetic Mn atoms by non-magnetic Ge atoms when concentration of the latter was varied from 10% to 75%. It was shown that when Ge concentration increases, the bulk band gap decreases and reaches zero plateau in the concentration range of 45-60% while trivial surface states (TrSS) are present and exhibit an energy splitting of 100 and 70 meV in different types of measurements. It was also shown that TSS disappear from the measured band dispersions at a Ge concentration of about 40%.
View Article and Find Full Text PDFEOSnet: Embedded Overlap Structures for Graph Neural Networks in Predicting Material Properties.
J Phys Chem Lett
January 2025
Department of Physics, Rutgers University, Newark, New Jersey 07102, United States of America.
Graph Neural Networks (GNNs) have emerged as powerful tools for predicting material properties, yet they often struggle to capture many-body interactions and require extensive manual feature engineering. Here, we present EOSnet (Embedded Overlap Structures for Graph Neural Networks), a novel approach that addresses these limitations by incorporating Gaussian Overlap Matrix (GOM) fingerprints as node features within the GNN architecture. Unlike models that rely on explicit angular terms or human-engineered features, EOSnet efficiently encodes many-body interactions through orbital overlap matrices, providing a rotationally invariant and transferable representation of atomic environments.
View Article and Find Full Text PDFHybrid Materials Based on Carbon Nanotubes and Tetra- and Octa-Halogen-Substituted Zinc Phthalocyanines: Sensor Response Toward Ammonia from the Quantum-Chemical Point of View.
Sensors (Basel)
December 2024
Nikolaev Institute of Inorganic Chemistry SB RAS, 3 Lavrentiev Pr., 630090 Novosibirsk, Russia.
This paper presents the results of quantum-chemical modeling performed by the Density Functional-Based Tight Binding (DFTB) method to investigate the change in the band structure of hybrid materials based on carbon nanotubes and unsubstituted, tetra-, or octa-halogen-substituted zinc phthalocyanines upon the adsorption of ammonia molecules. The study showed that the electrical conductivity of these materials and its changes in the case of interaction with ammonia molecules depend on the position of the impurity band formed by the orbitals of macrocycle atoms relative to the forbidden energy gap of the hybrids. The sensor response of the hybrids containing halogenated phthalocyanines was lower by one or two orders of magnitude, depending on the number of substituents, compared to the hybrid with unsubstituted zinc phthalocyanine.
View Article and Find Full Text PDFRoom Temperature NO-Sensing Properties of N-Doped ZnO Nanoparticles Activated by UV-Vis Light.
Sensors (Basel)
December 2024
CNR-IPCF, Institute for Chemical-Physical Processes Messina, 98158 Messina, Italy.
Zinc oxide nanoparticles (ZnO NPs) with varying levels of nitrogen (N) doping were synthesized using a straightforward sol-gel approach. The morphology and microstructure of the N-doped ZnO NPs were examined through techniques such as SEM, XRD, photoluminescence, and Raman spectroscopy. The characterization revealed visible changes in the morphology and microstructure resulting from the incorporation of nitrogen into the ZnO lattice.
View Article and Find Full Text PDFIdentifying Crystal Structure of Halides of Strontium and Barium Perovskite Compounds with EXPO2014 Software.
Materials (Basel)
December 2024
Instituto Politécnico Nacional ESIQIE, Mexico City 07700, Mexico.
The synthesis of ethylamine-based perovskites has emerged to attempt to replace the lead in lead-based perovskites for the alkaline earth elements barium and strontium, introducing chloride halide to prepare the perovskites in solar cell technology. X-ray diffraction studies were conducted, and EXPO2014 software was utilized to resolve the structure. Chemical characterization was performed using Fourier transform infrared spectroscopy, photophysical properties were analyzed through ultraviolet-visible spectroscopy, and photoluminescence properties were determined to confirm the perovskite characteristics.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!