The shortage of 3He, a crucial element widely used as a neutron converter in neutron detection applications, has sparked significant research efforts aimed at finding alternative materials, developing appropriate deposition methods, and exploring new detector architectures. This issue has required the exploration of novel approaches to address the challenges faced in neutron detection. Among the available conversion materials, 10B has emerged as one of the most promising choices due to its high neutron-capture cross-section and relatively high Q value. In our previous papers, we delved into the possibility of depositing neutron conversion layers based on 10B using Pulsed Laser Deposition (PLD). We investigated and evaluated the performance of these layers based on various factors, including deposition conditions, substrate properties, and film thickness. Moreover, we successfully developed and tested a device that employed a single conversion layer coupled with a silicon particle detector. In this current study, we present the development of a new device that showcases improved performance in terms of efficiency, sensitivity, and discrimination against γ background signals. The background signals can arise from the environment or be associated with the neutron field. To achieve these advancements, we considered a new detection geometry that incorporates the simultaneous use of two 10B conversion layers, each with a thickness of 1.5 μm, along with two solid-state silicon detectors. The primary objective of this design was to enhance the overall detection efficiency when compared to the single-layer geometry. By employing this novel setup, our results demonstrate a significant enhancement in the device's performance when exposed to a neutron flux from an Am-Be neutron source, emitting a flux of approximately 2.2 × 106 neutrons per second. Furthermore, we established a noteworthy agreement between the experimental data obtained and the simulation results.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10748251PMC
http://dx.doi.org/10.3390/s23249831DOI Listing

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