Following the finding of power conversion efficiency above the Shockley-Queisser limit in BaTiO (BTO) crystals, ferroelectric oxides have attracted scientific interest in ferroelectric photovoltaics (FPV). However, since ferroelectric oxides have a huge bandgap (>3 eV), progress in this sector is constrained. This paper proposes and demonstrates a new ferroelectric BaTiCoO powder (0 ≤ x ≤ 0.08), abbreviated as BTCx, that exhibited a bandgap decrease with increased Co content. Notably, changing the composition from x = 0.0 to 0.08 caused the system to show a bandgap drop from 3.24 to 2.42 eV. The ideal design with x = 0.08 displayed an abnormal PV response. Raman spectroscopy measurements were used to investigate the cause of the bandgap decrease, and density functional theory was used to interpret the analyzed results. According to our findings, Co doping and oxygen octahedral distortions enhance bandgap reduction. This research sheds light on how bandgap tuning developed and laid the way for investigating novel low-bandgap ferroelectric materials for developing next-generation photovoltaic applications.
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http://dx.doi.org/10.3390/ma16247528 | DOI Listing |
Nature
January 2025
Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are AlBN, AlScN and ZnMgO.
View Article and Find Full Text PDFNat Commun
January 2025
Antivortices have potential applications in future nano-functional devices, yet the formation of isolated antivortices traditionally requires nanoscale dimensions and near-zero magnetocrystalline anisotropy, limiting their broader application. Here, we propose an approach to forming antivortices in multiferroic ε-FeO with the coalescence of misaligned grains. By leveraging misaligned crystal domains, the large magnetocrystalline anisotropy energy is counterbalanced, thereby stabilizing the ground state of the antivortex.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China.
The composition in ferroelectric oxide films is decisive for optimizing properties and device performances. Controlling a composition distribution in these films by a facile approach is thus highly desired. In this work, we report a solution epitaxy of PbZrTiO films with a continuous gradient of Zr concentration, realized by a competitive growth at ~220 °C.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Center for Semiconductor Technology Convergence, Department of Electrical Engineering, Pohang University of Science and Technology, Cheongam-ro 77, Nam-gu, Pohang, Gyeongbuk 37673, South Korea.
A novel approach to delicately control the phase of a ferroelectric has been developed using a continuous-wave laser scanning annealing (CW-LSA) process. After proper process optimization, the equivalent oxide thickness (EOT) of 3.5 Å with a dielectric constant (κ) of 68 Å is achieved from HZO in a metal-ferroelectric-metal (MFM) capacitor structure.
View Article and Find Full Text PDFSci Adv
January 2025
2D Crystal Consortium, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, USA.
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