AI Article Synopsis

  • - The study addresses challenges faced by Zn metal anodes in aqueous batteries, such as unstable deposition and corrosion, by introducing a low concentration additive, 3-aminobenzenesulfonic acid (ASA), to regulate the interface environment.
  • - ASA preferred to adsorb onto the Zn surface over water, creating a protective ASA-rich layer that modifies the chemical interactions at the anode, inhibiting unwanted reactions like hydrogen evolution and facilitating stable Zn ion transport.
  • - The improved performance of the Zn anode with ASA includes a high depth of discharge and impressive cycle life, achieving 1100 hours of usage and maintaining a coulombic efficiency of 99.54% after 500 cycles, compared to significant challenges in

Article Abstract

The Zn metal anode in aqueous Zn batteries faces a number of challenges including instable deposition and corrosion issues. Here, we present an interface environment regulation for a Zn electrode with a low concentration electrolyte additive of 0.1 m 3-aminobenzenesulfonic acid (ASA). ASA prefers to adsorb on the Zn surface over water and creates an ASA-rich interface. It further enters the Zn solvation sheath locally, which shifts the lowest unoccupied molecular orbital from solvated water to ASA. The hydrogen evolution reaction from solvated water reduction is inhibited, and the reduction of solvated ASA generates a stable solid-electrolyte interphase composed of the ion conductor ZnS covered by organic-inorganic mixed components. With the resulting homogenized Zn deposition, continuous Zn stripping in symmetric cells reaches 99.7% depth of discharge (DOD) at a current density of 2 mA cm, whereas cell short-circuit takes place at 11.4% DOD in the ASA free ZnSO electrolyte. The repeated stripping/plating also realizes 1100 h cycle life at 2 mA cm, and a 99.54% stabilized coulombic efficiency is obtained for 500 cycles at 10 mA cm.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10732130PMC
http://dx.doi.org/10.1039/d3sc05098jDOI Listing

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