Perovskite solar cells (PSCs) have attracted extensive attention due to their higher power conversion efficiency (PCE) and simple fabrication process. However, the open-circuit voltage (V) loss remains a significant impediment to enhance device performance. Here, a facile strategy to boost the V to 95.5% of the Shockley-Queisser (S-Q) limit through the introduction of a universal multifunctional polymer additive is demonstrated. This additive effectively passivates the cation and anion defects simultaneously, thereby leading to the transformation from the strong n-type to weak n-type of perovskite films. Benefitting from the energy level alignment and the suppression of bulk non-radiative recombination, the quasi-Fermi level splitting (QFLS) is enhanced. Consequently, the champion devices with 1.59 eV-based perovskite reach the highest V value of 1.24 V and a PCE of 23.86%. Furthermore, this strategy boosts the V by at least 0.07 V across five different perovskite systems, a PCE of 25.04% is achieved for 1.57 eV-based PSCs, and the corresponding module (14 cm) also obtained a high PCE of 21.95%. This work provides an effective and universal strategy to promote the V approach to the detailed balance theoretical limit.
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http://dx.doi.org/10.1002/adma.202310962 | DOI Listing |
Nanomaterials (Basel)
November 2024
School of Microelectronics, Southern University of Science and Technology, Shenzhen 518055, China.
In this work, we present the novel application of SiN stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiN passivation significantly enhances the barrier height at the heterojunction beneath the gate, maintaining it above the quasi-Fermi level even as rises to 20 V. As a result, in GaN devices with a gate length of 160 nm, the devices with compressive stress SiN passivation exhibit significantly lower drain-induced barrier lowering (DIBL) factors of 2.
View Article and Find Full Text PDFMater Adv
October 2024
Department of Applied Physics and Science Education, Eindhoven University of Technology P.O. Box 513 5600 MB Eindhoven The Netherlands
Recent reports have shown that nickel oxide (NiO) when adopted as a hole transport layer (HTL) in combination with organic layers, such as PTAA or self-assembled monolayers (SAMs), leads to a higher device yield for both single junction as well as tandem devices. Nevertheless, implementing NiO in devices without PTAA or SAM is seldom reported to lead to high-performance devices. In this work, we assess the effect of key NiO properties deemed relevant in literature, namely- resistivity and surface energy, on the device performance and systematically compare the NiO-based devices with those based on PTAA.
View Article and Find Full Text PDFNature
November 2024
Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, China.
In recent years, perovskite has been widely adopted in series-connected monolithic tandem solar cells (TSCs) to overcome the Shockley-Queisser limit of single-junction solar cells. Perovskite-organic TSCs, comprising a wide-bandgap (WBG) perovskite solar cell (pero-SC) as the front cell and a narrow-bandgap organic solar cell (OSC) as the rear cell, have recently drawn attention owing to the good stability and potential high power conversion efficiency (PCE). However, WBG pero-SCs usually exhibit higher voltage losses than regular pero-SCs, which limits the performance of TSCs.
View Article and Find Full Text PDFThe quasi-Fermi level splitting (QFLS) deficit caused by the non-radiative recombination at the interface of perovskite/electron transport layer (ETL) can lead to severe open-circuit voltage (V) loss and thus decreases the efficiency of perovskite solar cells (PSCs), however, has received limited attention in inverted tin-lead PSCs. Herein, the strategy of constructing an extra-electric field is presented by introducing ferroelectric polymer dipoles (FPD)-β-poly(1,1-difluoroethylene)-to suppress the QFLS deficit. The directional polarization of FPD can enhance the built-in electric field (BEF) and thus promote the charge transfer at the perovskite/ETL interface, which effectively suppresses non-radiative recombination.
View Article and Find Full Text PDFChemSusChem
September 2024
Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou, 313001, P. R. China.
The photoelectrochemical (PEC) dual-electron pathway for water oxidation to produce hydrogen peroxide (HO) shows promising prospects. However, the dominance of the four-electron pathway leading to O evolution competes with this reaction, severely limiting the efficiency of HO production. Here, we report a InO passivator-coated BiVO (BVO) photoanode, which effectively enhances the selectivity and yield of HO production via PEC water oxidation.
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