Ionic transport through a graphene biomimetic subnanometer (sub-nm) pore of arbitrary shape and realistically decorated by intrinsic negatively charged sites is investigated by all-atom molecular dynamics (MD) simulations. In the presence of external electric fields, cation trapping-assisted translocation occurs in the vicinity of the 2D subnanometer pore, while the anion current is blocked by the negative charges. The adsorbed cations in such asymmetrically charged nanopores are located on the top of the nanopore instead of blocking the pore, as suggested previously in highly symmetric pores such as crown ethers. Our analysis of the different types of energy involved in ion translocations indicates that electrostatics is the dominant factor controlling ion transfer across these sub-nm pores. A physical model based on the thermionic emission formalism to account for the free energy barriers to ion flow reproduces the - characteristics.
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http://dx.doi.org/10.1021/acs.nanolett.3c03592 | DOI Listing |
Phys Chem Chem Phys
December 2024
Department of Electrical Engineering, College of Technical and Engineering, West Tehran Branch, Islamic Azad University, Tehran 1461944563, Iran.
Tunnel field-effect transistors (TFETs) are gaining interest for low-power applications, but challenges like poor drive current, delayed saturation, and ambipolarity can hinder their performance. This work proposes a dopingless heterojunction TFET (DL-HTDET) utilizing advanced materials, all based on phosphorus, to address these issues. Our approach involves a comprehensive and accurate analysis of the DL-HTDET's behavior.
View Article and Find Full Text PDFJ Phys Chem A
December 2024
Department of Chemistry, Durham University, Durham DH1 3LE, United Kingdom.
Photoelectron imaging of the doubly deprotonated ethylenediaminetetraacetic acid dianion (EDTA) at variable wavelengths indicates two electron loss pathways: direct detachment and thermionic emission from monoanions. The structure of EDTA is also investigated by electronic structure calculations, which indicate that EDTA has two intramolecular hydrogen bonds linking a carboxylate and carboxylic acid group at either end of the molecular backbone. The direct detachment feature in the photoelectron spectrum is very broad and provides evidence for a dissociative photodetachment, where decarboxylation occurs rapidly after electron loss.
View Article and Find Full Text PDFAdv Mater
December 2024
Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, 560064, India.
Metal/semiconductor superlattices represent a fascinating frontier in materials science and nanotechnology, where alternating layers of metals and semiconductors are precisely engineered at the atomic and nano-scales. Traditionally, epitaxial metal/semiconductor superlattice growth requires constituent materials from the same family, exhibiting identical structural symmetry and low lattice mismatch. Here, beyond this conventional constraint, a novel class of epitaxial lattice-matched metal/semiconductor superlattices is introduced that utilizes refractory hexagonal elemental transition metals and wide-bandgap III-nitride semiconductors.
View Article and Find Full Text PDFInt J Biol Macromol
January 2025
Institute of Engineering, Science, and Technology, Universidade Federal dos Vales do Jequitinhonha e Mucuri/UFVJM, Av. 01, 4050 Cidade Universitária, 39440-039 Janaúba, MG, Brazil; Pos-Graduate Program of Chemistry from Universidade Federal dos Vales do Jequitinhonha e Mucuri/UFVJM, Av. 01, 4050 Cidade Universitária, 39440-039 Janaúba, MG, Brazil. Electronic address:
The present research produced a new nanocomposite based on carboxymethyl cellulose (CMC) and graphene oxide (GO) for application in energy devices. A modified Hummers' method and two modifiers (UV radiation and heat temperature) were used. The nanocomposite was characterized by spectroscopies (FTIR, RAMAN, UV Vis), X-ray diffraction, morphological (SEM, TEM, DLS), and surface charge (ZP).
View Article and Find Full Text PDFAdv Mater
November 2024
Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
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