The new method of ZnInS synthesis on the titania nanotubes substrate with enhanced stability and photoelectrochemical performance.

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Department of Chemistry and Technology of Functional Materials, Faculty of Chemistry, Gdańsk University of Technology, Narutowicza 11/12, 80-233, Gdańsk, Poland.

Published: December 2023

In this work, ZnInS layers were obtained on fluorine doped tin oxide (FTO) glass and TiO nanotubes (TiONT) using a hydrothermal process as photoanodes for photoelectrochemical (PEC) water splitting. Then, samples were annealed and the effect of the annealing temperature was investigated. Optimization of the deposition process and annealing of ZnInS layers made it possible to obtain an FTO-based material generating a photocurrent of 1.2 mA cm at 1.62 V vs. RHE in a neutral medium. In contrast, the highest photocurrent in the neutral electrolyte obtained for the TiONT-based photoanode reached 0.5 mA cm at 1.62 V vs. RHE. In addition, the use of a strongly acidic electrolyte allowed the generated photocurrent by the TiONT-based photoanode to increase to 3.02 mA cm at 0.31 V vs. RHE. Despite a weaker photoresponse in neutral electrolyte than the optimized FTO-based photoanode, the use of TiONT as a substrate allowed for a significant increase in the photoanode's operating time. After 2 h of illumination, the photocurrent response of the TiONT-based photoanode was 0.21 mA cm, which was 42% of the initial value. In contrast, the FTO-based photoanode after the same time generated a photocurrent of 0.02 mA cm which was only 1% of the initial value. The results indicated that the use of TiO nanotubes as a substrate for ZnInS deposition increases the photoanode's long-term stability in photoelectrochemical water splitting. The proposed charge transfer mechanism suggested that the heterojunction between ZnInS and TiO played an important role in improving the stability of the material by supporting charge separation.

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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10692104PMC
http://dx.doi.org/10.1038/s41598-023-48309-9DOI Listing

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