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| http://dx.doi.org/10.1016/j.xinn.2023.100530 | DOI Listing |
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Rényi relative entropy based monogamy of entanglement in tripartite systems.
Sci Rep
January 2025
Department of Computer Science and Engineering, New York University Shanghai, 567 West Yangsi Road, Pudong, Shanghai, 200124, China.
A comprehensive investigation of the entanglement characteristics is carried out on tripartite spin-1/2 systems, examining prototypical tripartite states, the thermal Heisenberg model, and the transverse field Ising model. The entanglement is computed using the Rényi relative entropy. In the traditional Rényi relative entropy, the generalization parameter α can take values only in the range [Formula: see text] due to the requirements of joint convexity of the measure.
View Article and Find Full Text PDFMultipocket synergy towards high thermoelectric performance in topological semimetal TaAs.
Nat Commun
January 2025
Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, Germany.
Charge-carrier compensation in topological semimetals amplifies the Nernst signal and simultaneously degrades the Seebeck coefficient. In this study, we report the simultaneous achievement of both a large Nernst signal and an unsaturating magneto-Seebeck coefficient in a topological nodal-line semimetal TaAs single crystal. The unique dual-high transverse and longitudinal thermopowers are attributed to multipocket synergy effects: the combination of a strong phonon-drag effect and the two overlapping highly dispersive conduction and valence bands with electron-hole compensation and high mobility, promising a large Nernst effect; the third Dirac band causes a large magneto-Seebeck effect.
View Article and Find Full Text PDFPrediction and observation of topological modes in fractal nonlinear optics.
Light Sci Appl
January 2025
Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, and Center for Light-Matter Interaction, Tel Aviv University, Tel Aviv, Israel.
This item from the News and Views (N&V) category aims to provide a summary of theoretical and experimental results recently published in ref. , which demonstrates the creation of corner modes in nonlinear optical waveguides of the higher-order topological insulator (HOTI) type. Actually, these are second-order HOTIs, in which the transverse dimension of the topologically protected edge modes is smaller than the bulk dimension (it is 2, in the case of optical waveguide) by 2, implying zero dimension of the protected modes, which are actually realized as corner or defect ones.
View Article and Find Full Text PDFTransmissible topological edge states based on Su-Schrieffer-Heeger photonic crystals with defect cavities.
Nanophotonics
April 2024
State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter & Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China.
Topological photonic crystals have great potential in the application of on-chip integrated optical communication devices. Here, we successfully construct the on-chip transmissible topological edge states using one-dimensional Su-Schrieffer-Heeger (SSH) photonic crystals with defect cavities on silicon-on-insulator slab. Different coupling strengths between the lateral modes and diagonal modes in photonic crystal defect cavities are used to construct the SSH model.
View Article and Find Full Text PDFTopological states in finite graphene nanoribbons tuned by electric fields.
J Phys Condens Matter
December 2024
Department of Electrical Engineering and Department of Physics, National Central University, Chungli 32001, Taiwan.
Article Synopsis
- * We observe a blue Stark shift in energy levels for formal topological states, while the interface states exhibit an oscillatory Stark shift around the Fermi level.
- * Our findings highlight the impact of the Stark effect on transmission coefficients and suggest that electric fields can control coupling strength in topological interface states, offering insights for future electronic devices and quantum technologies.
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