We report high-performance AlGaN p-i-n ultraviolet (UV) avalanche photodiodes (APDs) based on sapphire substrates with stable breakdown voltages (V) around 113.4 V, low dark current densities (J) below 9 × 10 A/cm and a high avalanche gain over 2 × 10. A two-step deposition method was employed to reduce passivation-induced plasma damage while maintaining high dielectric film quality. Consistent J for various mesa sizes at the V are demonstrated, which reveals the suppression of the surface leakage current. Uniform electroluminescence (EL) distributions during the avalanche multiplication processes are displayed, which confirms the elimination of edge breakdown. Pure bulk leakage current distributions and uniform body avalanche breakdown behaviors are observed for the first time in AlGaN APDs. The emission spectra of the EL at various current levels are also presented.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OE.502988 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Evidence for cellular and solute passage between the brain and skull bone marrow across meninges: A systematic review.
J Cereb Blood Flow Metab
January 2025
KG Jebsen Centre for Brain Fluid Research, University of Oslo, Oslo, Norway.
A potential two-way passage of cells and substances between the brain and skull bone marrow may open for new insights into neurological disease. The arachnoid membrane was traditionally considered to restrict cells and larger molecules in CSF from entering the dura and bone marrow directly. However, new data on exchange between brain and skull bone marrow have recently emerged.
View Article and Find Full Text PDFPeening Techniques for Mitigating Chlorine-Induced Stress Corrosion Cracking of Dry Storage Canisters for Nuclear Applications.
Materials (Basel)
January 2025
Department of Mechanical Engineering, University of Nevada, Reno, NV 89557, USA.
Fusion-welded austenitic stainless steel (ASS) was predominantly employed to manufacture dry storage canisters (DSCs) for the storage applications of spent nuclear fuel (SNF). However, the ASS weld joints are prone to chloride-induced stress corrosion cracking (CISCC), a critical safety issue in the nuclear industry. DSCs were exposed to a chloride-rich environment during storage, creating CISCC precursors.
View Article and Find Full Text PDFTrench MOS Schottky Diodes: A Physics-Based Analytical Model Approach to Charge Sharing.
Micromachines (Basel)
January 2025
Power Solutions Group, Onsemi, Scottsdale, AZ 85250, USA.
Trench MOS Barrier Schottky (TMBS) rectifiers offer superior static and dynamic electrical characteristics when compared with planar Schottky rectifiers for a given active die size. The unique structure of TMBS devices allows for efficient manipulation of the electric field, enabling higher doping concentrations in the drift region and thus achieving a lower forward voltage drop (VF) and reduced leakage current (IR) while maintaining high breakdown voltage (BV). While the use of trenches to push electric fields away from the mesa surface is a widely employed concept for vertical power devices, a significant gap exists in the analytical modeling of this effect, with most prior studies relying heavily on computationally intensive numerical simulations.
View Article and Find Full Text PDFPass-Transistor-Enabled Split Input Voltage Level Shifter for Ultra-Low-Power Applications.
Micromachines (Basel)
January 2025
Department of Mechanical Engineering, College of Engineering, King Khalid University, Abha 61421, Saudi Arabia.
In modern ICs, sub-threshold voltage management plays a significant role due to its perspective on energy efficiency and speed performance. Level shifters (LSs) play a critical role in signal exchange among multiple voltage domains by ensuring signal integrity and the reliable operation of ICs. In this article, a Pass-Transistor-Enabled Split Input Voltage Level Shifter (PVLS) is designed for area, delay, and power-efficient applications with a wide voltage conversion range.
View Article and Find Full Text PDFX-Ray Performance of SiC NPN Radiation Detector.
Micromachines (Basel)
December 2024
Northwest Institute of Nuclear Technology, Xi'an 710024, China.
In this paper, a silicon carbide (SiC) phototransistor based on an open-base structure was fabricated and used as a radiation detector. In contrast to the exposed and thin sensitive region of traditional photo detectors, the sensitive region of the radiation detector was much thicker (30 μm), ensuring the high energy deposition of radiation particles. The response properties of the fabricated SiC npn radiation detector were characterized by high-energy X-ray illumination with a maximum X-ray photon energy of 30 keV.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!