RF Characterization of GaAs HBT under Load Mismatch with Reverse Wave Injection Technique.

Micromachines (Basel)

Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou 310018, China.

Published: November 2023

RF PAs need to be reliable enough to protect them from damage under load mismatch conditions. This paper investigated the characteristics of GaAs heterojunction bipolar transistors (HBTs) under load mismatch conditions using a novel reverse wave injection technique to realize large VSWR ruggedness measurement with the circle centered at 50 Ohm and optimal impedance separately to analyze the device in real applications. With a real-time waveform measurement system, the RF voltage and current waveform information can be acquired, which provide a more-accurate view of what is occurring at the current generator plane of the HBT device. Thereby, the potential failure mechanisms and load impedance can be identified to design the most-suitable PA circuits in communication systems.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10673382PMC
http://dx.doi.org/10.3390/mi14112058DOI Listing

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