A narrow-bandgap-induced potential field always results in decreased photovoltaic performance. Here, a finite solid solution was designed to explore the simultaneous improvement of the polarization property and bandgap obtained from the critical effect in which BiMnO (BM) enters the NaBiTiO (NBT) crystal lattice, resulting in a strong lattice expansion; by contrast, the incorporation of Mn without a d-orbital weakened the orbital hybridization accompanied by Jahn-Teller (J-T) distortion to reduce the optical bandgap. A narrow bandgap of 2.90 eV and polarization of 65.9 μC cm were achieved by finite solid solution engineering. The open-circuit voltage and the short-circuit current with a BM doping component of 0.04 reached as high as 1.1 V and 0.0132 mA cm, respectively. This work provides an optimized strategy for the mutual benefit of the polarization and bandgap by finite solid solution engineering.
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