Ultraviolet-induced degradation has emerged as a critical stability concern impeding the widespread adoption of perovskite solar cells (PSCs), particularly in the context of phase-unstable wide-band gap perovskite films. This study introduces a novel approach by employing a fully aromatic carbazole-based self-assembled monolayer, denoted as (4-(3,6-dimethoxy-9H-carbazol-9-yl)phenyl)phosphonic acid (MeO-PhPACz), as a hole-selective layer (HSL) in inverted wide-band gap PSCs. Incorporating a conjugated linker plays a pivotal role in promoting the formation of a dense and highly ordered HSL on substrates, facilitating subsequent perovskite interfacial interactions, and fostering the growth of uniform perovskite films. The high-quality film could effectively suppress interfacial non-radiative recombination, improving hole extraction/transport efficiency. Through these advancements, the optimized wide-band gap PSCs, featuring a band gap of 1.68 eV, attain an impressive power conversion efficiency (PCE) of 21.10 %. Remarkably, MeO-PhPACz demonstrates inherent UV resistance and heightened UV absorption capabilities, substantially improving UV resistance for the targeted PSCs. This characteristic holds significance for the feasibility of large-scale outdoor applications.
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http://dx.doi.org/10.1002/anie.202315281 | DOI Listing |
Sensors (Basel)
January 2025
Microbiology Institute of Shaanxi, No.76 Xiying Road, Xi'an 710043, China.
The trace detection of pyocyanin (PCN) is crucial for infection control, and electrochemical sensing technology holds strong potential for application in this field. A pivotal challenge in utilizing carbon materials within electrochemical sensors lies in constructing carbon-based films with robust adhesion. To address this issue, a novel composite hydrogel consisting of multi-walled carbon nanotubes/polyvinyl alcohol/phosphotungstic acid (MWCNTs/PVA/PTA) was proposed in this study, resulting in the preparation of a highly sensitive and stable PCN electrochemical sensor.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, China.
In this study, we aim to enhance the internal quantum efficiency (IQE) of AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) by using the short-period AlGaN/GaN superlattice as a tunnel junction (TJ) to construct polarized structures. We analyze in detail the effect of this polarized TJ on the carrier injection efficiency and investigate the increase in hole and electron density caused by the formation of 2D hole gas (2DHG) and 2D electron gas (2DEG) in the superlattice structure. In addition, a dielectric layer is introduced to evaluate the effect of stress changes on the tunneling probability and current spread in TJ.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Microelectronics, Xidian University, Xi'an 710071, China.
In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with different thicknesses of unintentional doping GaN (UID-GaN) channels were compared and discussed. In order to discuss the effect of different thicknesses of the UID-GaN layer on iron-doped tails, both AlGaN/GaN HEMTs share the same 200 nm GaN buffer layer with an Fe-doped concentration of 8 × 10 cm. Due to the different thicknesses of the UID-GaN layer, the concentration of Fe trails reaching the two-dimensional electron gas (2DEG) varies.
View Article and Find Full Text PDFSci Rep
January 2025
Applied Optics Laboratory, Institute of Optics and Precision Mechanics, University Setif 1, Setif, 19000, Algeria.
This prediction evaluates the different physical characteristics of magnetic materials XFeO (X = Mg, Ca and Sr) by using density functional theory (DFT). The generalized gradient approximation (GGA) approach is chosen to define the exchange and correlation potential. The structural study of the compounds XFeO (X = Mg, Ca and Sr) shows that the ferromagnetic phase is the more stable ground state, where all the parameters of the network are given at equilibrium.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Institute of New Energy Technology, College of Physics & Optoelectronic Engineering, Jinan University, Guangzhou 510632, China.
Trigonal selenium (t-Se) is a promising wide-band-gap photovoltaic material with a high absorption coefficient, abundant resources, simple composition, nontoxicity, and a low melting point, making it suitable for absorbers in advanced indoor and tandem photovoltaic applications. However, severe electrical losses at the rear interface of the t-Se absorber, caused by work function and lattice mismatches, limit the voltage output and overall performance. In this study, a strategy to enhance carrier transport and collection by modifying interfacial chemical interactions is proposed.
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