CHNHPbI is capable of exhibiting a superior photoresponse to visible light, but its self-powered devices are typically formed through - junctions. In this study, we fabricated a Ag/CHNHPbI/C dual-terminal asymmetric electrode device using a single CHNHPbI perovskite micro/nanowire, enabling both the photoresponse and self-powered characteristics of CHNHPbI to visible light. Compared with traditional - junction devices, this simple device demonstrates enhanced interface photovoltaic effects by optimizing the combination of the Ag electrode with CHNHPbI, resulting in superior self-powered characteristics. Under low bias voltage, the device achieves a significant on/off ratio of 10, with superior sensitivity and responsivity as well as a maximum rectification ratio of about 12. The photogenerated voltage and current reach approximately 0.8 V and 2 nA, respectively. This simple, compact, and self-powered asymmetric device exhibits great potential for applications in self-powered optoelectronics and wearable devices. This research provides a promising approach for recognizing and utilizing surface state effects in single nanoscale structures.
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