Growth and characterization of the magnetic topological insulator candidate MnSbTe.

We report a new member of topological insulator (TI) family i.e. MnSbTe, which belongs to MnSbTefamily and is a sister compound of MnBiTe. An antiferromagnetic layer of (MnTe)has been inserted between quintuple layers of SbTe. The crystal structure and chemical composition of as grown MnSbTecrystal is experimentally visualized by single crystal x-ray diffractometer and field emission scanning electron microscopy. The valence states of individual constituents i.e., Mn, Sb and Te are ascertained through x-ray photo electron spectroscopy. Different vibrational modes of MnSbTeare elucidated through Raman spectroscopy. Temperature-dependent resistivity() of MnSbTeresulted in metallic behavior of the same with an up-turn at below around 20 K. Further, the magneto-transport() vsof the same exhibited negative magneto-resistance (MR) at low temperatures below 20 K and small positive at higher temperatures. The low Temperature -ve MR starts decreasing at higher fields. The magnetic moment as a function of temperature at 100 Oe and 1 kOe showed anti-ferromagnetism (AFM) like down turn cusps at around 20 K and 10 K. The isothermal magnetization showed AFM like loops with some embedded ferromagnetic/paramagnetic (PM) domains at 5 K and purely PM like at 100 K. The studied MnSbTeclearly exhibited the characteristics of a magnetic TI.