Recently, there has been growing interest in the field of flat-band physics due to its attractive properties and wide range of practical applications. In this study, we introduce two novel two-dimensional monolayers, namely BCO and BCO, which exhibit a flat band near the Fermi level. These monolayers have been found to be energetically favorable, dynamically stable, and thermodynamically stable based on formation energies, phonon spectra, and molecular dynamics simulations. The nearly flat band (NFB) in BCO arises from the extended kagome sublattice of carbon atoms. Due to the strong interaction between carbon atoms beyond their nearest neighbors, the bandwidth of the initial flat band is extended to approximately 0.5 eV. Nevertheless, there is still a prominent peak in the density of states near the Fermi level. On the other hand, the NFB in BCO originates from the localized states of the carbon five-ring structure, which forms a distorted kagome lattice. The presence and characteristics of the NFB strongly depend on the interactions between next-nearest neighbors. Interestingly, the partially occupied NFB in BCO leads to spin splitting, resulting in a transformation of the system into a ferromagnetic metal. Our research not only presents two types of lattices capable of hosting flat bands or NFBs, but also provides two monolayers that can be employed to investigate various intriguing quantum phases.
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http://dx.doi.org/10.1039/d3cp04002j | DOI Listing |
Nanomaterials (Basel)
December 2024
Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, Mexico City 04510, Mexico.
The electronic states in flat bands possess zero group velocity and null charge mobility. Recently, flat electronic bands with fully localized states have been predicted in nanowires, when their hopping integrals between first, second, and third neighbors satisfy determined relationships. Experimentally, these relationships can only be closely achieved under external pressures.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Physics and Astronomy, Interdisciplinary Nanoscience Center, Aarhus University, Aarhus C 8000, Denmark.
Superlattices from twisted graphene mono- and bilayer systems give rise to on-demand many-body states such as Mott insulators and unconventional superconductors. These phenomena are ascribed to a combination of flat bands and strong Coulomb interactions. However, a comprehensive understanding is lacking because the low-energy band structure strongly changes when an electric field is applied to vary the electron filling.
View Article and Find Full Text PDFNat Mater
January 2025
Institute of Electrical and Microengineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.
Chirality, a basic property of symmetry breaking, is crucial for fields such as biology and physics. Recent advances in the study of chiral systems have stimulated interest in the discovery of symmetry-breaking states that enable exotic phenomena such as spontaneous gyrotropic order and superconductivity. Here we examine the interaction between light chirality and electron spins in indium selenide and study the effect of magnetic field on emerging tunnelling photocurrents at the Van Hove singularity.
View Article and Find Full Text PDFSci Rep
January 2025
Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, Xidian University, Xi'an, 710071, China.
(AlO)(HfO) films with varying compositions were deposited on silicon substrates via plasma-enhanced atomic layer deposition (PEALD), and metal-oxide-semiconductor (MOS) capacitors were fabricated. The impact of varying induced Al content on the dielectric properties of HfO was examined through electrical measurements. The results showed that increasing Al content raised the flat-band voltage, reduced the interface state density (D), and significantly lowered the leakage current at a given voltage.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Group of the Fourth-generation Semiconductor Materials and Devices, Shenzhen Pinghu Laboratory, Shenzhen 518111, China.
β-GaO is a candidate semiconductor material for high-power electronics due to its ultrawide bandgap and high Baliga's figure of merit. However, its -type doping is extremely difficult because of its low and flat band dispersion at its valence band maximum (VBM). A few reports have predicted that the VBM of β-GaO can be enhanced via alloying a specific metal (M), which enables -type conduction.
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