We present a facile one-pot method for the successful synthesis of heavy metal-free ZrS colloidal quantum dots (QDs) with a wide bandgap. To achieve this, we employed 1-dodecanethiol (DT) as a sulfur precursor, enabling the controlled release of HS during the reaction at temperatures exceeding 195 °C. This approach facilitated the synthesis of small-sized ZrS QDs with precise control.
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http://dx.doi.org/10.1039/d3cc03594h | DOI Listing |
Adv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFACS Nano
January 2025
State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology, Faculty of Integrated Circuit, Xidian University, 710071 Xi'an, China.
Flexible perovskite solar cells (FPSCs) have advanced significantly because of their excellent power-per-weight performance and affordable manufacturing costs. The unsatisfactory efficiency and mechanical stability of FPSCs are bottleneck challenges that limit their application. Here, we explore the use of octylammonium acetate (OAAc) with a long, intrinsic, flexible molecular chain on perovskite films for surface adhesion and mechanical releasing.
View Article and Find Full Text PDFSmall
January 2025
Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
The multiple exciton generation (MEG) effect, which produces multiple photo-generated charge carriers from a single high-energy photon absorption by a semiconductor with a narrow bandgap, has the potential to revolutionize photovoltaic, photoelectric detection, and other technologies. Here, this work finds that the surface carbon-modified wide-bandgap photoanode with hierarchical quantum structure can drive a photoelectrochemical reaction with a quantum efficiency exceeding 145% by the first time. More studies reveal that the presence of the MEG effect in the MEG-CdS photoanode is attributed to the formation of high-quality surface C-modified CdS quantum nanosheets on CdS bulk film by in situ, this hierarchical quantum structure leads to quantum confinement effects that increase effective Coulomb interaction for driving MEG and decrease competition for thermal exciton cooling.
View Article and Find Full Text PDFSmall
January 2025
College of Semiconductors (College of Integrated Circuits), Hunan University Changsha, Hunan, 410082, P. R. China.
Tin-based halide perovskites (ASnX) have garnered substantial interest due to their unique photoelectric properties and environmentally friendly features. The A-site ions tuning strategy has been proven to promote material performance. However, there is a lack of systematic research on the optical properties, lattice structure variation, and band structure evolution in tin-based perovskites when the A-site ions tune from organic to inorganic.
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January 2025
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.
Narrowband photodetection with selective light detection in ultraviolet (UV) range is particularly pronounced in specialized such as targeted wavelength imaging and UV-phototherapy. In contrast to conventional strategies, ferroelectric materials with pronounced bulk photovoltaic effect (BPVE) provide a novel asymmetric carrier generation concept for achieving filterless spectrally selective photodetection. Herein, for the first time, the realization of self-powered filterless narrowband UV photodetection is demonstrated in bulk single crystals of a newly developed halide perovskite ferroelectric, 2FEAEAPbCl (2FEEPC), which exhibits a wide bandgap of 3.
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