Introduction: Transistors are the fundamental electronic component integrated into electronic devices' chips Carbon Nano Tube (CNT) based field.
Methods: Effect Transistor (FET) is a promising component for next-generation transistor technologies; as it has high carrier mobility, device stability, and mechanical flexibility. Nevertheless, some shortcomings in the CNT FET's design prevent it from providing the best performance while preserving thermal stability.
Results: The structure and functionality of transistors with Double-Gate (DG) devices, which use carbon nanotubes as active channel regions, have been examined by the authors of this study. The DG CNT FET has been extensively simulated using an electronic device simulator with various device geometrics, including channel length, oxide thickness for its output, and transfer characteristics. In comparison to reported patents and published works, this demonstrates a significant improvement Conclusion: A new perspective on the DG CNT FET's device performance characteristics is provided by this research work, which can be scaled down to minimum channel length without Short Channel Effects (SCEs).
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.2174/1872210517666230622123317 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Automatic Single-Cell Harvesting for Fetal Nucleated Red Blood Cell Isolation on a Self-Assemble Cell Array (SACA) Chip.
Micromachines (Basel)
December 2024
Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan.
(1) Background: Fetal chromosomal examination is a critical component of modern prenatal testing. Traditionally, maternal serum biomarkers such as free β-human chorionic gonadotropin (Free β-HCG) and pregnancy-associated plasma protein A (PAPPA) have been employed for screening, achieving a detection rate of approximately 90% for fetuses with Down syndrome, albeit with a false positive rate of 5%. While amniocentesis remains the gold standard for the prenatal diagnosis of chromosomal abnormalities, including Down syndrome and Edwards syndrome, its invasive nature carries a significant risk of complications, such as infection, preterm labor, or miscarriage, occurring at a rate of 7 per 1000 procedures.
View Article and Find Full Text PDFEnhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe Channel.
Micromachines (Basel)
November 2024
Sede Vallenar, Universidad de Atacama, Costanera 105, Vallenar 1612178, Chile.
The continuous scaling down of MOSFETs is one of the present trends in semiconductor devices to increase device performance. Nevertheless, with scaling down beyond 22 nm technology, the performance of even the newer nanodevices with multi-gate architecture declines with an increase in short channel effects (SCEs). Consequently, to facilitate further increases in the drain current, the use of strained silicon technology provides a better solution.
View Article and Find Full Text PDFAlleviating the Effects of Short QT Syndrome Type 3 by Allele-Specific Suppression of the Mutant Allele.
Int J Mol Sci
December 2024
Department of Medical Biology, Amsterdam Cardiovascular Sciences, Amsterdam University Medical Center, University of Amsterdam, 1105 AZ Amsterdam, The Netherlands.
Short QT syndrome type 3 (SQTS3 or SQT3), which is associated with life-threatening cardiac arrhythmias, is caused by heterozygous gain-of-function mutations in the gene. This gene encodes the pore-forming α-subunit of the ion channel that carries the cardiac inward rectifier potassium current (I). These gain-of-function mutations either increase the amplitude of I or attenuate its rectification.
View Article and Find Full Text PDFDifferent Time Courses of Mono- and Bi-Liganded Bursts of Channel Openings of Adult nAChR Molecules Formed by the Reactions of Transmembrane Regions.
Cells
December 2024
Institute of Physiology, Department of Neurophysiology, University of Würzburg, Röntgenring 9, 97070 Würzburg, Germany.
We recorded transmembrane currents through single nicotinic acetylcholine receptors (nAChRs) in cell-attached patches at high temporal resolutions from cultured and transiently transfected HEK 293 cells. Receptor activation was elicited by acetylcholine (ACh) or epibatidine (Ebd) at concentrations ranging from 0.01 to 100 µM, binding to one (R or R) or both extracellular ligand binding sites (R).
View Article and Find Full Text PDFEmotion Recognition Model of EEG Signals Based on Double Attention Mechanism.
Brain Sci
December 2024
West China Institute of Children's Brain and Cognition, Chongqing University of Education, Chongqing 400065, China.
Background: Emotions play a crucial role in people's lives, profoundly affecting their cognition, decision-making, and interpersonal communication. Emotion recognition based on brain signals has become a significant challenge in the fields of affective computing and human-computer interaction.
Methods: Addressing the issue of inaccurate feature extraction and low accuracy of existing deep learning models in emotion recognition, this paper proposes a multi-channel automatic classification model for emotion EEG signals named DACB, which is based on dual attention mechanisms, convolutional neural networks, and bidirectional long short-term memory networks.
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!