Tin dioxide has huge potential and is widely studied and used in different fields, including as a sensitive material in semiconductor gas sensors. The specificity of the chemical activity of tin dioxide in its interaction with the gas phase is achieved via the immobilization of various modifiers on the SnO surface. The type of additive, its concentration, and the distribution between the surface and the volume of SnO crystallites have a significant effect on semiconductor gas sensor characteristics, namely sensitivity and selectivity. This review discusses the recent approaches to analyzing the composition of SnO-based nanocomposites (the gross quantitative elemental composition, phase composition, surface composition, electronic state of additives, and mutual distribution of the components) and systematizes experimental data obtained using a set of analytical methods for studying the concentration of additives on the surface and in the volume of SnO nanocrystals. The benefits and drawbacks of new approaches to the high-accuracy analysis of SnO-based nanocomposites by ICP MS and TXRF methods are discussed.
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http://dx.doi.org/10.3390/ma16206733 | DOI Listing |
Angew Chem Int Ed Engl
January 2025
Southern University of Science and Technology, Department of Materials Science and Engineering, NO.1088,Xueyuan Avenue,Nanshan District, 518055, Shenzhen, CHINA.
Tin dioxide (SnO2) stands as a promising material for the electron transport layer (ETL) in perovskite solar cells (PSCs) attributed to its superlative optoelectronic properties. The attainment of superior power conversion efficiency hinges critically on the preparation of high-quality SnO2 thin films. However, conventional nanoparticle SnO2 colloids often suffer from inherent issues such as numerous oxygen vacancy defects and film non-uniformity.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
Nanomaterials Laboratory, Department of Polymers and Functional Materials, CSIR-Indian Institute of Chemical Technology, Uppal Road, Tarnaka, Hyderabad 500 007, India.
Herein, porous SnO microspheres in a three-dimensional (3D) hierarchical architecture were successfully synthesized via a facile hydrothermal route utilizing d-(+)-glucose and cetyltrimethylammonium bromide (CTAB), which act as reducing and structure-directing agents, respectively. Controlled adjustment of the CTAB to glucose mole ratio, reaction temperature, reaction time, and the calcination parameters all provided important clues toward optimizing the final morphologies of SnO with exceptional structural stability and reasonable monodispersity. Electron microscopy analysis revealed that microspheres formed were hierarchical self-assemblies of numerous primary SnO nanoparticles of ∼3-8 nm that coalesce together to form nearly monodispersed and ordered spherical structures of sizes in the range of 230-250 nm and are appreciably porous.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Institute for Physical and Information Technologies (ITEFI-CSIC), 28006 Madrid, Spain.
Chemical nanosensors based on nanoparticles of tin dioxide and graphene-decorated tin dioxide were developed and characterized to detect low NO concentrations. Sensitive layers were prepared by the drop casting method. SEM/EDX analyses have been used to investigate the surface morphology and the elemental composition of the sensors.
View Article and Find Full Text PDFInt J Mol Sci
November 2024
Department of Solid-State Chemistry, Saint Petersburg State University, Saint Petersburg 199034, Russia.
This paper presents the results of a study on the characteristics of semiconductor sensors based on thin SnO films modified with antimony, dysprosium, and silver impurities and dispersed double Pt/Pd catalysts deposited on the surface to detect carbon monoxide (CO). An original technology was developed, and ceramic targets were made from powders of Sn-Sb-O, Sn-Sb-Dy-O, and Sn-Sb-Dy-Ag-O systems synthesized by the sol-gel method. Films of complex composition were obtained by RF magnetron sputtering of the corresponding targets, followed by technological annealing at various temperatures.
View Article and Find Full Text PDFSTAR Protoc
December 2024
Institute für High-Frequency and Semiconductor-System Technologies, Technische Universität Berlin, Einsteinufer 25, 10587 Berlin, Germany. Electronic address:
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