AI Article Synopsis
- The study focuses on the gas sensitivity and structural properties of TiO thin films created through plasma-enhanced atomic layer deposition (ALD) using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300 °C, followed by annealing at 800 °C.
- TiO thin films exhibit high sensitivity to oxygen (O) at temperatures ranging from 30 °C to 700 °C, with the strongest response at 500 °C, showing a response of 41.5 arbitrary units (arb. un.) to 10 vol. % O and noticeable sensitivity to low concentrations of hydrogen (H) and nitric oxide (NO).
- The researchers propose that the increased resistance in the
Article Abstract
The gas sensitivity and structural properties of TiO thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO thin films are deposited using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300 °C on SiO substrates followed by annealing at temperatures of 800 °C. Gas sensitivity under exposure to O within the temperature range from 30 °C to 700 °C was studied. The ALD-deposited TiO thin films demonstrated high responses to O in the dynamic range from 0.1 to 100 vol. % and low concentrations of H, NO. The ALD deposition allowed the enhancement of sensitivity of TiO thin films to gases. The greatest response of TiO thin films to O was observed at a temperature of 500 °C and was 41.5 arb. un. under exposure to 10 vol. % of O. The responses of TiO thin films to 0.1 vol. % of H and 7 × 10 vol. % of NO at a temperature of 500 °C were 10.49 arb. un. and 10.79 arb. un., correspondingly. The resistance of the films increased due to the chemisorption of oxygen molecules on their surface that decreased the thickness of the conduction channel between the metal contacts. It was suggested that there are two types of adsorption centers on the TiO thin films surface: oxygen is chemisorbed in the form of O on the first one and O on the second one.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10609136 | PMC |
| http://dx.doi.org/10.3390/mi14101875 | DOI Listing |
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