As the third-generation neural network, the spiking neural network (SNN) has become one of the most promising neuromorphic computing paradigms to mimic brain neural networks over the past decade. The SNN shows many advantages in performing classification and recognition tasks in the artificial intelligence field. In the SNN, the communication between the pre-synapse neuron (PRE) and the post-synapse neuron (POST) is conducted by the synapse. The corresponding synaptic weights are dependent on both the spiking patterns of the PRE and the POST, which are updated by spike-timing-dependent plasticity (STDP) rules. The emergence and growing maturity of spintronic devices present a new approach for constructing the SNN. In the paper, a novel SNN is proposed, in which both the synapse and the neuron are mimicked with the spin transfer torque magnetic tunnel junction (STT-MTJ) device. The synaptic weight is presented by the conductance of the MTJ device. The mapping of the probabilistic spiking nature of the neuron to the stochastic switching behavior of the MTJ with thermal noise is presented based on the stochastic Landau-Lifshitz-Gilbert (LLG) equation. In this way, a simplified SNN is mimicked with the MTJ device. The function of the mimicked SNN is verified by a handwritten digit recognition task based on the MINIST database.
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http://dx.doi.org/10.3390/mi14101820 | DOI Listing |
ACS Nano
January 2025
Chandra Family Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States.
Spiking neural networks seek to emulate biological computation through interconnected artificial neuron and synapse devices. Spintronic neurons can leverage magnetization physics to mimic biological neuron functions, such as integration tied to magnetic domain wall (DW) propagation in a patterned nanotrack and firing tied to the resistance change of a magnetic tunnel junction (MTJ), captured in the domain wall-magnetic tunnel junction (DW-MTJ) device. Leaking, relaxation of a neuron when it is not under stimulation, is also predicted to be implemented based on DW drift as a DW relaxes to a low energy position, but it has not been well explored or demonstrated in device prototypes.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Department of Computer Engineering, Modeling, Electronics, and Systems Engineering, University of Calabria, 87036 Rende, Italy.
This paper presents Cryo-SIMPLY, a reliable smart material implication (SIMPLY) operating at cryogenic conditions (77 K). The assessment considers SIMPLY schemes based on spin-transfer torque magnetic random access memory (STT-MRAM) technology with single-barrier magnetic tunnel junction (SMTJ) and double-barrier magnetic tunnel junction (DMTJ). Our study relies on a temperature-aware macrospin-based Verilog-A compact model for MTJ devices and a 65 nm commercial process design kit (PDK) calibrated down to 77 K under silicon measurements.
View Article and Find Full Text PDFSci Technol Adv Mater
November 2024
WPI Advanced Institute for Materials Research, Tohoku University, Sendai, Japan.
A body-centered cubic (bcc) FeCo(B) is a current standard magnetic material for perpendicular magnetic tunnel junctions (-MTJs) showing both large tunnel magnetoresistance (TMR) and high interfacial perpendicular magnetic anisotropy (PMA) when MgO is utilized as a barrier material of -MTJs. Since the -MTJ is a key device of current spintronics memory, . spin-transfer-torque magnetoresistive random access memory (STT-MRAM), it attracts attention for further advance to explore new magnetic materials showing both large PMA and TMR.
View Article and Find Full Text PDFACS Appl Mater Interfaces
November 2024
College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
Two-dimensional (2D) materials embedded in magnetic tunnel junctions (MTJs) provide a platform to increase the control over spin transport properties by the proximity spin-filtering effect. This could be harnessed to craft spintronic devices with low power consumption and high performance. We explore the spin transport in the 2D MTJs based on graphene, which is uniformly grown on Ni(111) substrates using the chemical vapor deposition technique.
View Article and Find Full Text PDFNano Lett
November 2024
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.
Nitrogen vacancy (NV) centers, atomic spin defects in diamond, represent an active contender for advancing transformative quantum information science (QIS) and innovations. One of the major challenges for designing NV-based hybrid systems for QIS applications results from the difficulty of realizing local control of individual NV spin qubits in a scalable and energy-efficient way. To address this bottleneck, we introduce magnetic tunnel junction (MTJ) devices to establish coherent driving of an NV center by a resonant MTJ with voltage controlled magnetic anisotropy.
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