In order to replace the phosphor screen of a proximity-gated x-ray framing camera with a readout circuit using a time-interleaved structure, this paper carries out the design of a high-isolation RF switch. In this paper, a Metal-Oxide-Semiconductor Field Effect Tube (MOSFET) switching circuit is designed to achieve high isolation and low insertion loss at 0.5-3 GHz. This solves the problem that the switching circuit cannot be turned off properly due to the parasitic capacitance of MOSFETs in the process of RF signal transmission, resulting in signal feedthrough. It also ensures that the input signal can be transmitted to the output intact when the switching circuit is turned on. High isolation is achieved by using parallel resonance to increase the voltage division and series resonance to leak the current. The switch achieves 76 dB isolation and 0.07 dB insertion loss at 1 GHz frequency. Isolation is increased by adding parallel branches near the 2 and 3 GHz frequency points, achieving greater than 33 dB isolation from 0.5 to 3 GHz.
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