Water effect on the band edges of anatase TiO surfaces: A theoretical study on charge migration across surface heterojunctions and facet-dependent photoactivity.

Phys Chem Chem Phys

State Key Laboratory of Physical Chemistry of Solid Surfaces, iChEM, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, China.

Published: November 2023

The charge migration mechanism across the surface heterojunction constructed on an anatase TiO nanocrystal is still under debate. To solve this longstanding question, we present a systematic study of the band edges ( standard hydrogen electrode, SHE) of aqueous TiO interfaces with anatase (101), (100) and (001) surfaces, using a combination of density functional theory-based molecular dynamics (DFTMD) and efficient computational SHE (cSHE) methods. Our calculations show that the conduction band minimum (CBM) of the (101) surface is lower than that of (001) and (100) surfaces, which is thermodynamically favorable for electrons migrating to the (101) surface through the surface heterojunction, while the hole preferentially accumulates on the (100) surface due to its highest valence band minimum (VBM). In addition, we qualitatively explore the facet-dependent photocatalytic activity of anatase TiO. Due to the possession of both the beneficial atomic structure (with 100% undercoordinated Ti atoms at the surface) and electronic structure (more strongly oxidizing holes in the VBM and efficient electron-hole spatial separation separation), the (001) surface exhibits the most efficient photocatalytic performance for water oxidation. Furthermore, it is confirmed that the use of simplified theoretical models neglecting the detailed atomic structures of water at the aqueous interface is inadequate to predict the band alignment of semiconductors relative to water redox potentials, so that it may result in substantial errors in evaluating the photocatalytic performance of materials to be used for water splitting.

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Source
http://dx.doi.org/10.1039/d3cp03662fDOI Listing

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