Tuneable Schottky contact of / van der Waals heterostructure.

Heliyon

Key Laboratory of Electronic Composites of Guizhou Province, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, Guizhou, People's Republic of China.

Published: October 2023

AI Article Synopsis

  • The study explores the promising potential of a two-dimensional monolayer semiconductor material, highlighting its thin profile and excellent optoelectronic properties.
  • Researchers used first-principles density functional theory to analyze a van der Waals heterostructure made from two-dimensional monolayers, noting its ability to form a low-resistance contact.
  • By applying an electric field and vertical stress, the team found a way to modify the contact type from ohmic to p-type Schottky, suggesting opportunities for developing advanced, reconfigurable nano-devices.

Article Abstract

The two-dimensional monolayer is an emerging semiconductor material that offers considerable promise due to its ultra-thin profile, tuneable mechanical properties, excellent optoelectronic properties and exceptional environmental stability. The van der Waals (vdW) heterostructure formed by stacking such two-dimensional monolayers has demonstrated superior performance across various domains. In this study, a vdW heterostructure combining the two-dimensional and monolayers is examined using first-principles density functional theory. In its ground state, this van der Waals heterostructure establishes an ohmic contact with an exceptionally low potential barrier height. By modulating the vdW heterostructure with an applied electric field of -0.1 V/Å and under vertical stress, we discovered that and can transition from an ohmic contact to a p-type Schottky with an ultra-low Schottky barrier height (SBH). Our observations may give valuable insights for designing reconfigurable, tuneable Schottky nano-devices with enhanced electronic and optical properties based on .

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10589790PMC
http://dx.doi.org/10.1016/j.heliyon.2023.e20619DOI Listing

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