Field-effect bulk mobilities in polymer semiconductor films measured by sourcemeters.

Rev Sci Instrum

Frontier Institute of Science and Technology, Xi'an Jiaotong University, Xi'an 710054, People's Republic of China.

Published: June 2023

Semiconducting polymers inherently exhibit polydispersity in terms of molecular structure and microscopic morphology, which often results in a broad distribution of energy levels for localized electronic states. Therefore, the bulk charge mobility strongly depends on the free charge density. In this study, we propose a method to measure the charge-density-dependent bulk mobility of conjugated polymer films with widely spread localized states using a conventional field-effect transistor configuration. The gate-induced variation of bulk charge density typically ranges within ±1018 cm-3; however, this range depends significantly on the energetic dispersion width of localized states. The field-effect bulk mobility and field-effect mobility near the semiconductor-dielectric interface along with their dependence on charge density can be simultaneously extracted from the transistor characteristics using various gate voltage ranges.

Download full-text PDF

Source
http://dx.doi.org/10.1063/5.0143003DOI Listing

Publication Analysis

Top Keywords

charge density
12
field-effect bulk
8
bulk charge
8
bulk mobility
8
localized states
8
field-effect
4
bulk mobilities
4
mobilities polymer
4
polymer semiconductor
4
semiconductor films
4

Similar Publications

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!