The efficiency of energy coupled to plasma during femtosecond (fs) laser filamentation plays a decisive role in a variety of filament applications such as remote fabrication and spectroscopy. However, the energy deposition characterization in the fs laser filament formed by a telescope, which provides an efficient way to extend the filament distance, has not yet been revealed. In the present study, we show that when the distance between the two lenses in a telescope changes, i.e., the effective focal length changes, there exists an optimal plateau energy deposition region in which the energy deposited into the filament per unit length called the average lineic energy deposition (ALED) remains at high levels, exhibiting a remarkable difference from the monotonic change in a single-lens focusing system. As a proof of principle, we examined the influence of the energy deposition on the ignition of a lean methane/air mixture, and found that the use of the telescope can efficiently extend the ignition distance when compared with a single-lens focusing system under the same incident laser energy condition. Our results may help understand the energy deposition behaviors in a variety of telescopic filaments and provide more options to manipulating laser ignition at a desired distance.
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http://dx.doi.org/10.1364/OE.500042 | DOI Listing |
ChemSusChem
January 2025
Beijing National Laboratory for Molecular Sciences, State Key Laboratory for Structural Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P.R. China.
Inverted perovskite solar cells (IPSCs) utilizing nickel oxide (NiO) as hole transport material have made great progress, driven by improvements in materials and interface engineering. However, challenges remain due to the low intrinsic conductivity of NiO and inefficient hole transport. In this study, we introduced MoS nanoparticles at the indium tin oxide (ITO) /NiO interface to enhance the ITO surface and optimize the deposition of NiO, resulting in increased conductivity linked to a ratio of Ni:Ni.
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January 2025
Faculty of Materials Science and Engineering, Phenikaa University, Hanoi 12116, Viet Nam.
Cupric oxide (CuO) is a promising p-type semiconducting oxide used in many critical fields, such as energy conversion and storage, and gas sensors, which is attributed to its unique optoelectrical properties and cost-effectiveness. This work successfully deposited amorphous, pinhole-free, ultrathin CuO films using atmospheric pressure spatial atomic layer deposition (SALD) with copper(II) acetylacetonate and ozone as precursors. The growth rate increased from 0.
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June 2025
Biofuel and Renewable Energy Research Center, Department of Chemical Engineering, Babol Noshirvani University of Technology, Babol, Iran.
Microbial fuel cells (MFCs) have garnered significant attention from researchers as an innovative and environmentally friendly method for the treatment of urban and industrial wastewater. The type and material of the electrode are critical factors affecting the efficiency and energy production of this process. The electrodeposition method was employed to dope nickel (Ni) and modify the surface of graphite plates (GP) and carbon felt (CF).
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January 2025
Centro de Investigación en Materiales Avanzados, S.C. (CIMAV Subsede Monterrey), Alianza Norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66628 Apodaca, Nuevo León, Mexico.
Thermal atomic layer deposition (TALD) and plasma atomic layer deposition (PALD) were used for producing thin NiO films from nickel(II) acetylacetonate Ni(acac), employing different oxidizing agents (deionized water HO, ozone O, and molecular oxygen O). The films were deposited at 300 °C (TALD) and 220 °C (PALD) over glass substrates; their physical and chemical properties were considerably influenced by the choice of oxidizing agents. In particular, ALD(HO) samples had a low growth per cycle (GPC) and a high concentration of defects.
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January 2025
Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon 24341, South Korea.
Zinc oxide (ZnO) thin-film transistors (TFTs) can be promising for applications in wide-band light absorption. However, they suffer from retarded photoresponse characteristics due to atomic defects and the resulting localized electronic states. To investigate the photoinduced localized states of the ZnO TFTs, here, we combine X-ray photoelectron spectroscopy, atomic force microscopy, and density functional theory (DFT) calculations.
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