This study presents the utilization of MoS as a diffusion barrier for metal interconnects, in situ transmission electron microscopy (TEM) observations are employed for comprehensive understanding. The diffusion-blocking ability of MoS is discussed by the diffusion and phase transformation between Ru and Si via TEM diffraction and imaging. When the sample is heated to a high temperature such that MoS loses the ability to block the diffusion, Si diffuses through the MoS into the Ru layer, leading to the formation of RuSi. Both multilayer and monolayer (1L) MoS exhibit exceptional diffusion-blocking ability up to 800 °C. Furthermore, plasma-treated 1L-MoS shows a slightly low diffusion-blocking temperature of 750 °C, while the dangling bonds in MoS improve the interfacial adhesion. These findings suggest that MoS holds great potential as a diffusion barrier for metal interconnects.
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