AI Article Synopsis
- The study investigates the structural stability and electrical properties of WSSe under high pressure using techniques like Raman spectroscopy and HRTEM, alongside theoretical calculations.
- WSSe undergoes a phase transition at 15.2 GPa and transitions from a semiconductor to a metal at 25.3 GPa, with the closure of the bandgap explaining this metallization.
- Under hydrostatic conditions, a pressure hysteresis of about 2.0 GPa is observed during phase transitions, and the phase changes are reversible, enhancing our understanding of Janus transition-metal dichalcogenides for future technological applications.
Article Abstract
In this work, we presented the first report on the high-pressure structural stability and electrical transport characteristics in WSSe under different hydrostatic environments through Raman spectroscopy, electrical conductivity, and high-resolution transmission electron microscopy (HRTEM) coupled with first-principles theoretical calculations. For nonhydrostatic conditions, WSSe endured a phase transition at 15.2 GPa, followed by a semiconductor-to-metal crossover at 25.3 GPa. Furthermore, the bandgap closure was accounted for the metallization of WSSe as derived from theoretical calculations. Under hydrostatic conditions, ∼ 2.0 GPa pressure hysteresis was detected for the emergence of phase transition and metallization in WSSe because of the feeble deviatoric stress. Upon depressurization, the reversibility of the phase transition was substantiated by those of microscopic HRTEM observations under different hydrostatic environments. Our high-pressure investigation on WSSe advances the insightful understanding of the crystalline structure and electronic properties for the Janus transition-metal dichalcogenide (TMD) family and boosts prospective developments in functional devices.
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| http://dx.doi.org/10.1021/acs.inorgchem.3c02144 | DOI Listing |
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