Advanced bioelectronic detection based on the integration of modern optical electronics and biological systems has a broad prospect. The strategy of cathode signal amplification in self-powered photoelectrochemical (PEC) immunosensors with excellent performance is rarely reported in the field of immune analysis. Herein, the work demonstrates a self-powered PEC biosensor formed with BiOI photocathode and WO/SnS/ZnS photoanode, and CsPbBr@COF-V was used as the photocathode signal quenching source for the quantitative monitoring of heart fatty acid binding protein (H-FABP). The high efficiency and stable self-powered biosensor formed not only provides continuous and powerful photocurrent response for bioanalysis through reasonable stepped band structure, but also effectively eliminates the interference of reducing substances. The quenching source CsPbBr@COF-V greatly affects the photocurrent response due to steric hindrance, weak conductivity, competition with the substrate for dissolved oxygen and excitation light source. And the intervention of this key factor achieves multiple signal amplification effect and opens up an innovative vision for self-powered PEC immunosensor. Taking H-FABP as a representative analyte, the proposed signal amplification self-powered photoelectrochemical presents a broad linear range from 0.0005 to 150 ng/mL with the detection limit of 0.19 pg/mL.
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http://dx.doi.org/10.1016/j.bios.2023.115710 | DOI Listing |
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December 2024
Institute of Micro/Nano Materials and Devices, Ningbo University of Technology, Ningbo, 315211, P. R. China.
In the realm of photodetector (PD) technology, photoelectrochemical (PEC) PDs have garnered attention owing to their inherent advantages. Advances in this field depend on functional nanostructured materials, which are pivotal in improving the separation and transport of photogenerated electron-hole pairs to improve device efficiency. Herein, a highly photosensitive PEC UV PD is built using integrated self-supporting SiC/ZnS heterojunction nanowire array photoelectrodes through anodization and chemical deposition.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China.
Photoelectrochemical photodetectors (PEC PDs) are promising in underwater optoelectronic devices because of their low cost, good sensitivity, and self-powered characteristics. However, achieving high-performance omnidirectional visible PEC PDs using seawater as the electrolyte is still challenging, hindering their practical application. This work successfully synthesized CuO nanobelt arrays (NAs) on a linear copper wire via a low-temperature solution method with an annealing process.
View Article and Find Full Text PDFSmall
December 2024
College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin, 150040, China.
The field of photoelectrochemical-type (PEC) ultraviolet (UV) photodetectors has witnessed swift progression due to their facile fabrication processes and self-powered function. The realization of high-performance and self-powered PEC UV photodetectors is attractive and challenging. In this study, the application of ZnAl mixed metal oxide (MMO) heterojunctions in self-powered PEC UV photodetectors is introduced for the first time.
View Article and Find Full Text PDFACS Appl Nano Mater
November 2024
Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague, Czech Republic.
The concept of self-powered photodetectors has attracted significant attention due to their versatile applications in areas such as intelligent systems and hazardous substance detection. Among these, junction and Schottky junction photodetectors are the most widely studied types; however, their fabrication processes are often complex and costly. To overcome these challenges, we focused on the emerging self-powered, ultrasensitive photodetector platform based on photoelectrochemical (PEC) principles.
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November 2024
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China.
Colloidal InP/ZnSeS-based quantum dots (QDs) are considered promising building blocks for light-emitting devices due to their environmental friendliness, high quantum yield (QY), and narrow emission. However, the intrinsic type-I band structure severely hinders potential photoelectrochemical (PEC) applications requiring efficient photoexcited carrier separation and transfer. In this study, the optoelectronic properties of InP/ZnSeS QDs are tailored by introducing Al dopants in the ZnSeS layer, which concurrently passivate the surface defects and act as shallow donor states for suppressed non-radiative recombination and improved charge extraction efficiency.
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