Two combined ellipsometric techniques-variable angle spectroscopic ellipsometry (VASE) and variable temperature spectroscopic ellipsometry (VTSE)-were used as tools to study the surface order and dielectric properties of thin films of a poly(3-hexylthiophene-2,5-diyl) (P3HT) mixture with a fullerene derivative (6,6-phenyl-C71-butyric acid methyl ester) (PC70BM). Under the influence of annealing, a layer of the ordered PC70BM phase was formed on the surface of the blend films. The dielectric function of the ordered PC70BM was determined for the first time and used in the ellipsometric modeling of the physical properties of the P3HT:PC70BM blend films, such as their dielectric function and thickness. The applied ellipsometric optical model of the polymer-fullerene blend treats the components of the blend as a mixture of optically ordered and disordered phases, using the effective medium approximation for this purpose. The results obtained using the constructed model showed that a layer of the ordered PC70BM phase was formed on the surface of the layer of the polymer and fullerene mixture. Namely, as a result of thermal annealing, the thickness of the layer of the ordered fullerene phase increased, while the thickness of the underlying material layer decreased.
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http://dx.doi.org/10.3390/polym15183752 | DOI Listing |
J Colloid Interface Sci
December 2024
Biological Physics Laboratory, Department of Physics and Astronomy, University of Manchester, Oxford Road, Schuster Building, Manchester M13 9PL, UK. Electronic address:
Hypothesis: Bioengineered monoclonal antibodies (mAbs) have gained significant recognition as medical therapies. However, during processing, storage and use, mAbs are susceptible to interfacial adsorption and desorption, leading to structural deformation and aggregation, and undermining their bioactivity. To suppress antibody surface adsorption, nonionic surfactants are commonly used in formulation.
View Article and Find Full Text PDFNanomaterials (Basel)
January 2025
Department of Physics, Kyung Hee University, Seoul 02447, Republic of Korea.
We report the complex dielectric function = + of MoS/WS and WS/MoS heterostructures and their constituent monolayers MoS and WS for an energy range from 1.5 to 6.0 eV and temperatures from 39 to 300 K.
View Article and Find Full Text PDFMicromachines (Basel)
December 2024
School of Physics, Changchun University of Science and Technology, Changchun 130012, China.
Tungsten oxide (WO) electrochromic devices are obtaining increasing interest due to their color change and thermal regulation. However, most previous work focuses on the absorption or transmission spectra of materials, rather than the optical parameters evolution in full spectrum in the electrochromic processes. Herein, we developed a systematic protocol of ex situ methods to clarify the evolutions of subtle structure changes, Raman vibration modes, and optical parameters of WO thin films in electrochromic processes as stimulated by dosage-dependent Li insertion.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
In recent years, the fabrication of materials with large nonlinear optical coefficients and the investigation of methods to enhance nonlinear optical performance have been in the spotlight. Herein, the bismuth telluride (BiTe) thin films were prepared by radio-frequency magnetron sputtering and annealed in vacuum at various temperatures. The structural and optical properties were characterized and analyzed using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and UV/VIS/NIR spectrophotometry.
View Article and Find Full Text PDFSci Rep
January 2025
Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, Pardubice, 532 10, Czech Republic.
Radio frequency magnetron co-sputtering method employing GeTe and Sc targets was exploited for the deposition of Sc doped GeTe thin films. Different characterization techniques (scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, atomic force microscopy, sheet resistance temperature-dependent measurements, variable angle spectroscopic ellipsometry, and laser ablation time-of-flight mass spectrometry) were used to evaluate the properties of as-deposited (amorphous) and annealed (crystalline) Ge-Te-Sc thin films. Prepared amorphous thin films have GeTe, GeTeSc, GeTeSc, GeTeSc and GeTeSc chemical composition.
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