Optimization of Sulfide Annealing Conditions for AgSnS Thin Films.

Materials (Basel)

National Institute of Technology (KOSEN), Miyakonojo College, Miyakonojo 885-8567, Japan.

Published: September 2023

AgSnS (ATS) has been reported to have a band gap of 1.33 eV and is expected to be a suitable material for the light-absorbing layers of compound thin-film solar cells. However, studies on solar cells that use ATS are currently lacking. The objective of this study is to obtain high-quality ATS thin films for the realization of compound thin-film solar cells using vacuum deposition and sulfide annealing. First, glass/SnS/Ag stacked precursors are prepared by vacuum deposition. Subsequently, they are converted to the ATS phase via sulfide annealing, and various process conditions, namely, annealing time, annealing temperature, and number of steps, are studied. By setting the heat treatment temperature at 550 °C and the heat treatment time at 60 min, a high-quality ATS thin film could be obtained. Multi-step heat treatment also produces thin films with nearly no segregation or voids.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10533031PMC
http://dx.doi.org/10.3390/ma16186289DOI Listing

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