We report the growth of Ge-doped homoepitaxial diamond films by microwave plasma CVD in GeH-CH-H gas mixtures at moderate pressures (70-100 Torr). Optical emission spectroscopy was used to monitor Ge, H, and C species in the plasma at different process parameters, and trends for intensities of those radicals, gas temperature, and excitation temperature, with variations of GeH or CH precursor concentrations, were investigated. The film deposited on (111)-oriented single crystal diamond substrates in a high growth rate regime revealed a strong emission of a germanium-vacancy (GeV) color center with a zero-phonon line at ≈604 nm wavelength in photoluminescence (PL) spectra, confirming the successful doping. The observed PL shift for the GeV defect is caused by stress in the films, as evidenced and quantified by Raman spectra. These results suggest that doping with Ge using a GeH precursor is a convenient method of controlling the formation of GeV centers in epitaxial diamond films for photonic applications.
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Nanomaterials (Basel)
December 2024
Institute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, Saulėtekio Ave. 3, 10257 Vilnius, Lithuania.
We elaborate a method for determining the 0D-1D nanostructure size by photoluminescence (PL) emission spectrum dependence on the nanostructure dimensions. As observed, the high number of diamond-like carbon nanocones shows a strongly blue-shifted PL spectrum compared to the bulk material, allowing for the calculation of their top dimensions of 2.0 nm.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Chemistry and Center of Super-Diamond & Advanced Films, City University of Hong Kong, Kowloon, Hong Kong 999077, China.
The large-scale preparation of two-dimensional (2D) materials is pivotal in unlocking their extensive potential for next-generation semiconductor device applications. Wafer-scale single crystals of a high-symmetry 2D material (e.g.
View Article and Find Full Text PDFNanomaterials (Basel)
September 2024
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan.
We study a quantum cone, a novel structure composed of multiple quantum dots with gradually decreasing diameters from the base to the top. The dot distribution leads to a dispersive radiated spectrum. The blue edge of the spectrum is determined by the quantum confinement of excitons on top of the cones, while the red edge is determined by the bandgap of a semiconductor.
View Article and Find Full Text PDFNanotechnology
October 2024
CEA, LETI, University Grenoble Alpes, 38000 Grenoble, France.
Semiconductor nanowires (NWs) are believed to play a crucial role for future applications in electronics, spintronics and quantum technologies. A potential candidate is HgTe but its sensitivity to nanofabrication processes restrain its development. A way to circumvent this obstacle is the selective area growth technique.
View Article and Find Full Text PDFJ Phys Chem Lett
August 2024
Istituto Officina dei Materiali IOM-CNR, Laboratorio TASC, Area Science Park, S.S.14, km 163.5, Trieste I-34149, Italy.
A-site doped SrTiO is considered as a promising substitute for traditional anodic metals in solid oxide fuel cells (SOFCs). In this study, we present the reactivity of LaSrCaTiO (LCSTO), LaSrTiO (LSTO), and SrTiO (STO) toward H by ambient pressure NEXAFS spectroscopy and theoretical spectra simulation with FDMNES code. The samples were synthesized by MBE (molecular beam epitaxy), hydrothermal, and modified-Pechini routes.
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