The utilization of handwritten electronic signatures has expanded in various application scenarios, leading to an increased demand for identification. Unlike handwriting signatures, handwritten electronic signatures offer the advantage of extracting dynamic feature data, including writing pressure, velocity, and acceleration. In this study, the Fourier transform was employed to extract 18 characteristics from the time domain and frequency domain of writing pressure, velocity, and acceleration. The experimental findings revealed distinguishable differences between genuine signatures and random forgeries in writing pressure. However, no statistically significant differences were observed in writing velocity and writing acceleration. Moreover, significant differences were detected in most characteristics when comparing genuine signatures with freehand imitation forgeries and tracing imitation forgeries. The canonical discriminant analysis was performed between the genuine and Non-genuine signatures; the cross-validation estimated the discriminating power of these characteristics with a satisfactory result. The study proposed a new approach to analyzing handwritten electronic signatures using time-domain and frequency-domain characteristics and demonstrated its effectiveness in the examination.
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http://dx.doi.org/10.1111/1556-4029.15386 | DOI Listing |
Nat Commun
January 2025
School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Energy efficiency in computation is ultimately limited by noise, with quantum limits setting the fundamental noise floor. Analog physical neural networks hold promise for improved energy efficiency compared to digital electronic neural networks. However, they are typically operated in a relatively high-power regime so that the signal-to-noise ratio (SNR) is large (>10), and the noise can be treated as a perturbation.
View Article and Find Full Text PDFAdv Mater
January 2025
School of Electronic and Computer Engineering, Peking University, Shenzhen, 518055, China.
The increasing demand for mobile artificial intelligence applications has elevated edge computing to a prominent research area. Silicon materials, renowned for their excellent electrical properties, are extensively utilized in traditional electronic devices. However, the development of silicon materials for flexible neuromorphic computing devices encounters great challenges.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
The burgeoning volume of parameters in artificial neural network models has posed substantial challenges to conventional tensor computing hardware. Benefiting from the available optical multidimensional information entropy, optical intelligent computing is used as an alternative solution to address the emerging challenges of electrical computing. These limitations, in terms of device size and photonic integration scale, have hindered the performance of optical chips.
View Article and Find Full Text PDFAdv Mater
December 2024
Catalonia Institute for Energy Research (IREC), Jardins de les Dones de Negre 1, 2, Sant Adriá de Besós, Barcelona, 08930, Spain.
Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant challenges that impede their commercialization. These challenges include high variability due to their stochastic nature.
View Article and Find Full Text PDFSmall Methods
December 2024
State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083, China.
Memristors and magnetic tunnel junctions are showing great potential in data storage and computing applications. A magnetoelectrically coupled memristor utilizing electron spin and electric field-induced ion migration can facilitate their operation, uncover new phenomena, and expand applications. In this study, devices consisting of Pt/(LaCoO/SrTiO)/LaCoO/Nb:SrTiO (Pt/(LCO/STO)/LCO/NSTO) are engineered using pulsed laser deposition to form the LCO/STO superlattice layer, with Pt and NSTO serving as the top and bottom electrodes, respectively.
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