Geometrically necessary dislocations (GNDs) play a key role in accommodating strain incompatibility between neighboring grains in polycrystalline materials. One critical step toward accurately capturing GNDs in deformation models involves studying the microstructural features that promote GND accumulation and the resulting character of GND fields. This study utilizes high-resolution electron backscatter diffraction to map GND populations in a large polycrystalline sample of pure tantalum, under simple tension. A total of 1,989 grains, 3,518 grain boundaries (GBs), and 3,207 triple junctions (TJs) were examined in a subsurface region of the sample. Correlations between GND density and GB character, and to some extent, TJ character, are investigated. Statistical geometrical relationships between these entities are quantified, and also visualized, using a novel application of two-point statistics. The nature of GNDs across the sample is also visualized and assessed using a recently developed method of mapping the local net Burgers vectors. The different approaches to characterizing GND distribution are compared in terms of how they quantify the size of near boundary gradient zones.
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http://dx.doi.org/10.1093/micmic/ozad049 | DOI Listing |
Microsc Microanal
January 2025
Université de Lorraine, CNRS, Arts et Métiers, LEM3, Metz 57070, France.
Characterizing threading dislocations (TDs) in gallium nitride (GaN) semiconductors is crucial for ensuring the reliability of semiconductor devices. The current research addresses this issue by combining two techniques using a scanning electron microscope, namely electron channeling contrast imaging (ECCI) and high-resolution electron backscattered diffraction (HR-EBSD). It is a comparative study of these techniques to underscore how they perform in the evaluation of TD densities in GaN epitaxial layers.
View Article and Find Full Text PDFSci Rep
December 2024
School of Mechanical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, China.
Microtextured microneedles are tiny needle-like structures with micron-scale microtextures, and the drugs stored in the microtextures can be released after entering the skin to achieve the effect of precise drug delivery. In this study, the skin substitution model of Ogden's hyperelastic model and the microneedle array and microtexture models with different geometrical parameters were selected to simulate and analyse the flow of the microtexture microneedle arrays penetrating the skin by the finite-element method, and the length of the microneedles was determined to be 200 μm, the width 160 μm, and the value of the gaps was determined to be 420 μm. A four-pronged cone was chosen as the shape of microneedles, and a rectangle was chosen as the shape of the drug-carrying microneedle.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Institute of Physics & Optoelectronics Technology, Baoji University of Arts and Sciences, Baoji 721016, China.
CrCoNi medium-entropy alloys (MEAs), characterised by their high configurational entropies, have become a research hotspot in materials science. Recent studies have indicated that MEAs exhibit short-range order (SRO), which affects their deformation mechanisms. In this study, the micro-mechanisms of SRO within the framework of mesoscale continuum mechanics are mathematically evaluated using an advanced, non-local crystal plasticity constitutive framework.
View Article and Find Full Text PDFR Soc Open Sci
December 2024
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan.
The existence of stress singularities and reliance on linear approximations pose significant challenges in comprehending the stress field generation mechanism around dislocations. This study employs differential geometry and calculus of variations to mathematically model and numerically analyse screw dislocations. The kinematics of the dislocation are expressed by the diffeomorphism of the Riemann-Cartan manifold, which includes both the Riemannian metric and affine connection.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Integrated Circuits, Southeast University, Nanjing 211189, China.
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