Graphene is a nonlinear material in the terahertz (THz) frequency range, with χ ∼ 10 m/V ∼ 15 orders of magnitude higher than that of other materials used in the THz range, such as GaAs or lithium niobate. This nonlinear behavior, combined with ultrafast dynamic for excited carriers, proved to be essential for third harmonic generation in the sub-THz and low (<2.5 THz) THz range, using moderate (60 kV/cm) fields and at room temperature. Here, we show that, for monochromatic high peak power (1.8 W) input THz signals, emitted by a quantum cascade laser, the nonlinearity can be controlled using an ionic liquid gate that tunes the graphene Fermi energy up to >1.2 eV. Pump and probe experiments reveal an intense absorption nonlinearity at 3.2 THz, with a dominant 3rd-order contribution at > 0.7 eV, hence opening intriguing perspectives per engineering novel architectures for light generation at frequencies > 9 THz.
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http://dx.doi.org/10.1021/acsphotonics.3c00543 | DOI Listing |
Nat Commun
December 2024
Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, CA, USA.
Tightly bound electron-hole pairs (excitons) hosted in atomically-thin semiconductors have emerged as prospective elements in optoelectronic devices for ultrafast and secured information transfer. The controlled exciton transport in such excitonic devices requires manipulating potential energy gradient of charge-neutral excitons, while electrical gating or nanoscale straining have shown limited efficiency of exciton transport at room temperature. Here, we report strain gradient induced exciton transport in monolayer tungsten diselenide (WSe) across microns at room temperature via steady-state pump-probe measurement.
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December 2024
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, China.
A ridge-loaded staggered double-vane slow-wave structure is proposed for terahertz radiation sources employing a sheet electron beam. This slow-wave structure has the advantages of enhanced electric field and energy density distribution and improved interaction impedance in the beam-wave interaction region. High-frequency characteristics are investigated for the proposed slow wave structure and compared with those of the staggered double-vane slow wave structure.
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December 2024
Department of Electronics, Carleton University, Ottawa, ON, K1S 5B6, Canada.
In this paper, we propose a novel structure of anisotropic graphene-based hyperbolic metamaterial (AGHMM) sandwiched as a defect between two one-dimensional photonic crystals (PCs) in the terahertz (THz) region. The proposed structure is numerically simulated and analyzed using the transfer matrix method, effective medium theory and three-dimensional finite-difference time-domain. The defect layer of AGHMM consists of graphene sheets separated by subwavelength dielectric spacers.
View Article and Find Full Text PDFSmall
December 2024
School of Microelectronics, Northwestern Polytechnical University, 127 West Youyi Road, Beilin District, Xi'an, Shaanxi, 710072, P. R. China.
2D photodetectors operating in photovoltaic mode exhibit a trade-off between response speed and photoresponsivity. This work presents a phototransistor based on SnS/ReSe heterojunction. Under negative bias, the energy band spike at the heterojunction interface impedes the carrier drifting so that the dark current is as low as 10 A.
View Article and Find Full Text PDFNanomicro Lett
December 2024
Department of Materials Science, Fudan University, Shanghai, 200433, People's Republic of China.
Emerging two-dimensional MXenes have been extensively studied in a wide range of fields thanks to their superior electrical and hydrophilic attributes as well as excellent chemical stability and mechanical flexibility. Among them, the ultrahigh electrical conductivity (σ) and tunable band structures of benchmark TiCT MXene demonstrate its good potential as thermoelectric (TE) materials. However, both the large variation of σ reported in the literature and the intrinsically low Seebeck coefficient (S) hinder the practical applications.
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