AI Article Synopsis
- The study explores how aluminum (Al) interacts with chemical vapor deposited (CVD) silicon carbide (SiC) surfaces in the integrated circuit industry.
- It found that the contact angle of Al on SiC can be adjusted between 6° and 153° at temperatures between 1573 K and 1773 K, which is higher than values seen in polycrystalline and single crystal SiC.
- The presence of dislocations at the Al/SiC interface increases interfacial energy and results in a larger contact angle on the 〈111〉-oriented SiC compared to the 〈110〉 orientation.
Article Abstract
In the integrated circuit industry, metal liquids are frequently in contact with chemical vapor deposited (CVD) SiC, and it is important to understand the interactions between CVD-SiC and metal droplets. In this study, the wetting behavior of Al on a highly oriented SiC surface was investigated, and the contact angle could be controlled from 6° to 153° at a wetting temperature () of 1573-1773 K; the obtained contact angle range was larger than that of polycrystalline silicon carbide ( = 873-1473 K, 9-113°) and single crystal silicon carbide ( = 873-1473 K, 31-92°). The presence of many dislocations at the Al/SiC interface increased the interfacial energy, resulting in a greater contact angle for Al on the 〈111〉-oriented SiC coating surface than on the 〈110〉 one.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC10483271 | PMC |
| http://dx.doi.org/10.1039/d3ra03335j | DOI Listing |
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