The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment. However, the applications of modern biosensors face numerous problems and require improvement. Some of these problems can be attributed to sensor design, while others can be attributed to technological limitations. The aim of this work is to conduct a theoretical investigation of the "antibody + antigen" complex (AB + AG) detection processes of a SOI-FET biosensor, which may also solve some of the aforementioned problems. Our investigation concentrates on the analysis of the probability of AB + AG complex detection and evaluation. Poisson probability density distribution was used to estimate the probability of the adsorption of the target molecules on the biosensor's surface and, consequently, to obtain correct detection results. Many implicit and unexpected causes of error detection have been identified for AB + AG complexes using SOI-FET biosensors. We showed that accuracy and time of detection depend on the number of SOI-FET biosensors on a crystal.
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http://dx.doi.org/10.3390/s23177490 | DOI Listing |
Sovrem Tekhnologii Med
October 2024
General Director; Joint Stock Company "Design Center for Biomicroelectronic Technologies Vega", 60a Dachnaya St., Novosibirsk, 630082, Russia.
Unlabelled: A biosensor based on field-effect transistors on silicon-on-insulator structures (SOI-biosensor) is a high-potential device for detection of biological molecules, for instance, such as troponin I; the biosensor allows conducting label-free real-time analysis. is the development of SOI-biosensor design for detection of acute myocardial infarction marker - troponin I. A notable feature of this design was the integration of two grounding electrodes directly onto the biosensor surface, which effectively nullified the static potential of the liquid sample and minimized physical breakdowns of biosensor elements.
View Article and Find Full Text PDFNanotechnology
October 2024
Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, People's Republic of China.
This study investigates the response of nanowire field-effect transistors (NWFETs) to total ionizing dose (TID), single-event transient (SET), and their coupling effects in junctionless (JL), inversion (IM), and junctionless accumulation (AC) modes. The degradation of the three modes under irradiation and the effect of device bias configuration on the electrical properties of NWFETs are analyzed, and the different effects of SET on the three modes are compared. On this basis, the influence of TID on SET current generation and the charge collection mechanism are studied, and the changes in peak current, pulse width, and collected charge of transient current under different TIDs are compared.
View Article and Find Full Text PDFPLoS One
April 2024
Department of Electrical Engineering, Kermanshah University of Technology, Kermanshah, Iran.
This research introduces a new designing process and analysis of an innovative Silicon-on-Insulator Metal-Semiconductor Field-Effect (SOI MESFET) structure that demonstrates improved DC and RF characteristics. The design incorporates several modifications to control and reduce the electric field concentration within the channel. These modifications include relocating the transistor channel to sub-regions near the source and drain, adjusting the position of the gate electrode closer to the source, introducing an aluminum layer beneath the channel, and integrating an oxide layer adjacent to the gate.
View Article and Find Full Text PDFAppl Spectrosc
December 2024
Department of Basic and Applied Sciences for Engineering, Sapienza University of Rome, Rome, Italy.
The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturization and a constant demand for higher performance and energy efficiency. However, the reduction of metal-oxide-semiconductor field-effect transistor sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance.
View Article and Find Full Text PDFBiosensors (Basel)
March 2024
Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea.
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