AI Article Synopsis

  • Organic radicals show promise for deep-red and near-infrared electroluminescent devices due to their ability to emit light through spin-allowed doublet fluorescence.
  • A new device design uses a thermally activated delayed fluorescence (TADF) host to enhance electron and hole transport, leading to higher performance in radical-based light emission.
  • The reported device achieves a maximum external quantum efficiency (EQE) of 17.4% at 707 nm, with minimal performance decrease at high current densities, marking a significant advance in using organic radicals for practical NIR applications.

Article Abstract

Organic radicals have been of interest due to their potential to replace nonradical-based organic emitters, especially for deep-red/near-infrared (NIR) electroluminescence (EL), based on the spin-allowed doublet fluorescence. However, the performance of the radical-based EL devices is limited by low carrier mobility which causes a large efficiency roll-off at high current densities. Here, highly efficient and bright doublet EL devices are reported by combining a thermally activated delayed fluorescence (TADF) host that supports both electron and hole transport and a tris(2,4,6-trichlorophenyl)methyl-based radical emitter. Steady-state and transient photophysical studies reveal the optical signatures of doublet luminescence mechanisms arising from both host and guest photoexcitation. The host system presented here allows balanced hole and electron currents, and a high maximum external quantum efficiency (EQE) of 17.4% at 707 nm peak emission with substantially improved efficiency roll-off is reported: over 70% of the maximum EQE (12.2%) is recorded at 10 mA cm , and even at 100 mA cm , nearly 50% of the maximum EQE (8.4%) is maintained. This is an important step in the practical application of organic radicals to NIR light-emitting devices.

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Source
http://dx.doi.org/10.1002/adma.202303666DOI Listing

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