Bismuth (Bi) has the strongest spin-orbit coupling among non-radioactive elements and is thus a promising material for efficient charge-to-spin conversion. However, previous electrical detections have reported controversial results for the conversion efficiency. In this study, an optical detection of a spin-orbit torque is reported in a Bi/CoFeB bilayer with a polycrystalline texture of (012) and (003). Taking advantage of the optical detection, spin-orbit torque is accurately separated from the Oersted field and achieves a giant damping-like torque efficiency of +0.5, verifying efficient charge-to-spin conversion. This study also demonstrates a field-like torque efficiency of -0.1. For the mechanism of the charge-to-spin conversion, the bulk spin Hall effect and the interface Rashba-Edelstein effect are considered.
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http://dx.doi.org/10.1002/advs.202303831 | DOI Listing |
Nano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
View Article and Find Full Text PDFNat Commun
January 2025
Institute of Physics, Johannes Gutenberg University Mainz, 55099, Mainz, Germany.
Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) devices offer improved power efficiency, nonvolatility, and performance compared to static RAM, making them ideal, for instance, for cache memory applications. Efficient magnetization switching, long data retention, and high-density integration in SOT MRAM require ferromagnets (FM) with perpendicular magnetic anisotropy (PMA) combined with large torques enhanced by Orbital Hall Effect (OHE). We have engineered a PMA [Co/Ni] FM on selected OHE layers (Ru, Nb, Cr) and investigated the potential of theoretically predicted larger orbital Hall conductivity (OHC) to quantify the torque and switching current in OHE/[Co/Ni] stacks.
View Article and Find Full Text PDFACS Nano
January 2025
Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore.
Nanoscale Horiz
December 2024
Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Antiferromagnetic materials have several unique properties, such as a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against perturbation from external magnetic fields and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets as their active spin-dependent elements. Among the various antiferromagnetic materials, conducting antiferromagnets offer high electrical and thermal conductivities and strong electron-spin-phonon interactions.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
The prevailing research emphasis has been on reducing the critical switching current density (J) by enhancing the damping-like efficiency (β). However, recent studies have shown that the field-like efficiency (β) can also play a major role in reducing J. In this study, the central inversion asymmetry of Pt-Co is significantly enhanced through interface engineering at the sub-atomic layer of Ta, thereby inducing substantial alterations in the β associated with the interface.
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