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http://dx.doi.org/10.1161/CIRCULATIONAHA.123.065539 | DOI Listing |
The introduction of intermediate bands by hyperdoping is an efficient way to realize infrared light absorption of silicon. In this Letter, inert element (helium and argon for specific)-doped black silicon is obtained by helium ion-implantation followed by femtosecond pulse laser irradiation in an argon atmosphere based on near-intrinsic silicon substrates. Within the 200 nm of the silicon surface, the concentrations of helium and argon are both above the order of 10 cm.
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