A B- and F-enriched buffering interphase enables a high-rate and high-stability SiO/C anode.

Chem Commun (Camb)

Guangdong Provincial Key Laboratory of Plant Resources Biorefinery, School of Chemical Engineering and Light Industry, Guangdong University of Technology, Guangzhou 510006, China.

Published: September 2023

A facile, universal surface engineering strategy is proposed to address the volume expansion and slow kinetic issues encountered by SiO/C anodes. A B-/F-enriched buffering interphase is introduced onto SiO/C by thermal treatment of pre-adsorbed lithium salts at 400 °C. The as-prepared anode integrates both high-rate performance and long-term cycling durability.

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http://dx.doi.org/10.1039/d3cc03427eDOI Listing

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