Ambient-Stable 2D Dion-Jacobson Phase Tin Halide Perovskite Field-Effect Transistors with Mobility over 1.6 Cm V s.

Adv Mater

Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China.

Published: November 2023

Solution-processed metal halide perovskites hold immense potential for the advancement of next-generation field-effect transistors (FETs). However, the instability of perovskite-based transistors has impeded their progress and practical applications. Here, ambient-stable high-performance FETs based on 2D Dion-Jacobson phase tin halide perovskite BDASnI , which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH SCN additives within the precursor solution. The refined FETs demonstrate field-effect hole mobilities up to 1.61 cm V s and an on/off ratio surpassing 10 . Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.

Download full-text PDF

Source
http://dx.doi.org/10.1002/adma.202305648DOI Listing

Publication Analysis

Top Keywords

dion-jacobson phase
8
phase tin
8
tin halide
8
halide perovskite
8
field-effect transistors
8
ambient-stable dion-jacobson
4
perovskite field-effect
4
transistors mobility
4
mobility solution-processed
4
solution-processed metal
4

Similar Publications

Growth window optimization for large-size quasi-two-dimensional Dion-Jacobson type perovskites.

Chem Commun (Camb)

January 2025

Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.

Article Synopsis
  • Quasi-2D DJ type perovskites show potential for X-ray detection but typically struggle with phase segregation and small crystal sizes.
  • Researchers synthesized large single crystals of the quasi-2D perovskite (3AMPY)(MA)PbBr using temperature-controlled methods, leading to enhanced properties.
  • The produced X-ray detector demonstrated impressive metrics, including high resistivity and sensitivity, indicating these materials could be key for future optoelectronic applications.
View Article and Find Full Text PDF

Radiation-Sensitive Layered Hybrid Double Perovskites Driven by a Dual-Ion-Woven Supramolecular Framework for X-Ray Tomography.

Angew Chem Int Ed Engl

November 2024

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.

Article Synopsis
  • - The study introduces layered hybrid double perovskites (LHDPs) as promising candidates for X-ray detection, overcoming sensitivity limitations by enhancing charge transport through a novel structural design using ethylenediamine (EDA).
  • - The new LHDPs, (EDABr)4AgBiBr8 and (EDABr)4CuBiBr8, feature a unique Ruddlesden-Popper-like interlayer structure that improves interlayer interactions and charge transport due to a dual-ion-woven supramolecular framework.
  • - The developed devices show exceptional sensitivity (5250 μC Gyair-1cm-2), a low detection limit (91 nGyair s-1), and impressive radiation
View Article and Find Full Text PDF

CsNdNbO is a hybrid improper ferroelectric (HIF) where oxygen octahedral rotation modes induce spontaneous polarization. While CsLaNbO is also believed to be an HIF, its polar structure and ferroelectric properties remain poorly understood. This study investigates their solid solution, CsLaNdNbO, by constructing a temperature-composition phase diagram using synchrotron X-ray diffractometry, first-principles calculations, and dielectric measurements.

View Article and Find Full Text PDF
Article Synopsis
  • - The study investigates the emission characteristics of TMPDA-based perovskite single crystals, highlighting dual emission origins from free and bound excitons and the significant impact of structural distortion and exciton-phonon coupling on these emissions.
  • - Coupling strengths between excitons and phonons are notably high compared to inorganic semiconductors, and bound exciton recombination decreases at lower temperatures, indicating enhanced carrier localization.
  • - The research further reveals that the specific heat deviates from expected norms, implying strong lattice coupling, and that the photocurrent exhibits a specific relationship with incident intensity, suggesting notable bimolecular recombination among carriers.
View Article and Find Full Text PDF
Article Synopsis
  • DJ structured quasi-2D perovskites are being explored as advanced materials for lasers due to their strong photoelectric performance and stability.
  • The study focuses on how modifying these materials with Cremophor EL improves their carrier dynamics, leading to better performance in laser applications.
  • As a result of this modification, the laser's amplified spontaneous emission (ASE) performance significantly improves, indicated by lower energy thresholds and higher optical gain coefficients.
View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!