Solution-processed metal halide perovskites hold immense potential for the advancement of next-generation field-effect transistors (FETs). However, the instability of perovskite-based transistors has impeded their progress and practical applications. Here, ambient-stable high-performance FETs based on 2D Dion-Jacobson phase tin halide perovskite BDASnI , which has high film quality and excellent electrical properties, are reported. The perovskite channels are established by engineering the film crystallization process via the employment of ammonium salt interlayers and the incorporation of NH SCN additives within the precursor solution. The refined FETs demonstrate field-effect hole mobilities up to 1.61 cm V s and an on/off ratio surpassing 10 . Moreover, the devices show impressive operational and environmental stability and retain their functional performance even after being exposed to ambient conditions with a temperature of 45 °C and humidity of 45% for over 150 h.
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http://dx.doi.org/10.1002/adma.202305648 | DOI Listing |
Chem Commun (Camb)
January 2025
Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
Angew Chem Int Ed Engl
November 2024
Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China.
Inorg Chem
December 2024
Department of Applied Chemistry, Kyushu University, Motooka, Fukuoka 819-0395, Japan.
CsNdNbO is a hybrid improper ferroelectric (HIF) where oxygen octahedral rotation modes induce spontaneous polarization. While CsLaNbO is also believed to be an HIF, its polar structure and ferroelectric properties remain poorly understood. This study investigates their solid solution, CsLaNdNbO, by constructing a temperature-composition phase diagram using synchrotron X-ray diffractometry, first-principles calculations, and dielectric measurements.
View Article and Find Full Text PDFSmall
November 2024
Department of Physics, Indian Institute of Technology Roorkee, Roorkee, 247667, India.
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