Diverse long-term potentiation and depression based on multilevel LiSiOmemristor for neuromorphic computing.

Nanotechnology

School of Integrated Circuit Science and Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin 300384, People's Republic of China.

Published: September 2023

Memristor-based neuromorphic computing is expected to overcome the bottleneck of von Neumann architecture. An artificial synaptic device with continuous conductance variation is essential for implementing bioinspired neuromorphic systems. In this work, a memristor based on Pt/LiSiO/TiN structure is developed to emulate an artificial synapse, which shows non-volatile multilevel resistance state memory behavior. Moreover, the high nonlinearity caused by abrupt changes in the set process is optimized by adjusting the initial resistance. 100 levels of continuously modulated conductance states are achieved and the nonlinearity factors are reduced to 1.31. The significant improvement is attributed to the decrease in the Schottky barrier height and the evolution of the conductive filaments. Finally, due to the improved linearity of the long-term potentiation/long-term depression behaviors in LiSiOmemristor, a robust recognition rate (∼94.58%) is achieved for pattern recognition with the modified National Institute of Standards and Technology handwriting database. The Pt/LiSiO/TiN memristor shows significant potential in high-performance multilevel data storage and neuromorphic computing systems.

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http://dx.doi.org/10.1088/1361-6528/acf0c8DOI Listing

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