This paper described a four-band implantable RF rectifier with simplified circuit complexity. Each RF-rectifier cell is sequentially matched to the four operational frequencies to accomplish the proposed design. The proposed RF rectifier can harvest RF signals at 1.830, 2.100, and white space Wi-Fi bands between 2.38 to 2.68 GHz, respectively. At 2.100 GHz, the proposed RF harvester achieved a maximum (radio frequency direct current) RF-to-DC power conversion efficiency (PCE) of 73.00% and an output DC voltage [Formula: see text] of 1.61 V for an RF power of 2 dBm. The outdoor performance of the rectenna shows a [Formula: see text] of 0.440 V and drives a low-power bq25504-674 evaluation module (EVM) at 1.362 V. The dimension of the RF-rectifier on the FR-4 PCB board is 0.27[Formula: see text] [Formula: see text] 0.29[Formula: see text]. The RF-rectifier demonstrates the capacity to effectively utilize the frequency domain by employing multi-band operation and exhibiting a good impedance bandwidth through a sequential matching technique. Thus, by effectively controlling the rectenna's ambient performance, the proposed design holds the potential for powering a range of low-power biomedical implantable devices. (BIDs).
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http://dx.doi.org/10.1038/s41598-023-40486-x | DOI Listing |
Philos Trans A Math Phys Eng Sci
January 2025
Microsystems Group, School of Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU, UK.
The increasing demand for processing large volumes of data for machine learning (ML) models has pushed data bandwidth requirements beyond the capability of traditional von Neumann architecture. In-memory computing (IMC) has recently emerged as a promising solution to address this gap by enabling distributed data storage and processing at the micro-architectural level, significantly reducing both latency and energy. In this article, we present In-Memory comPuting architecture based on Y-FlAsh technology for Coalesced Tsetlin machine inference (IMPACT), underpinned on a cutting-edge memory device, Y-Flash, fabricated on a 180 nm complementary metal oxide semiconductor (CMOS) process.
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January 2025
Computational Physics Key Laboratory of Sichuan Province, Yibin University, Yibin, China.
The potential energy curves, dipole moments and transition dipole moments of the 14 Λ-S states and 30 Ω states of TlBr cation were performed using the multi-reference configuration interaction method. The Davidson correction and spin-orbit coupling effects were also considered. The spectroscopic properties and transition properties of TlBr cation were reported at the first time.
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January 2025
Laboratory for Artificial Intelligence, Institute for Computational Science and Artificial Intelligence, Van Lang University, Ho Chi Minh City, Vietnam.
Compliant mechanism has some advantages and has been widely applied in many accurate positioning systems. However, modeling the compliant mechanism behavior has suffered from many challenges, such as unstable results, and the limitation of training data set. In the field of compliant mechanism modeling, there has been no research interested in applying meta-heuristics optimization algorithms to optimize the weights and biases of the neural network globally.
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January 2025
College of Intelligent Systems Science and Engineering, Hubei Minzu University, Enshi, 445000, China.
This paper addresses the low level of intelligence in tea processing equipment in Enshi Prefecture by designing an intelligent withering control system based on the STMicroelectronics 32-bit Microcontroller (STM32). This control system can achieve real-time monitoring of the withering environment and automate the control of heating and ventilation dehumidification modules. By integrating IoT technology, relevant users can view the tea production process via mobile devices, enabling intelligent and remote production operations.
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January 2025
Department of Physics, The American University in Cairo, New Cairo, 11835, Egypt.
Inverse design with topology optimization considers a promising methodology for discovering new optimized photonic structure that enables to break the limitations of the forward or the traditional design especially for the meta-structure. This work presents a high efficiency mid infra-red imaging photonics element along mid infra-red wavelengths band starts from 2 to 5 µm based on silicon nitride optimized material structures. The first two designs are broadband focusing and reflective meta-lens under very high numerical aperture condition (NA = 0.
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