Ultra-thin films of low damping ferromagnetic insulators with perpendicular magnetic anisotropy have been identified as critical to advancing spin-based electronics by significantly reducing the threshold for current-induced magnetization switching while enabling new types of hybrid structures or devices. Here, we have developed a new class of ultra-thin spinel structure LiAlFeO (LAFO) films on MgGaO (MGO) substrates with: 1) perpendicular magnetic anisotropy; 2) low magnetic damping and 3) the absence of degraded or magnetic dead layers. These films have been integrated with epitaxial Pt spin source layers to demonstrate record low magnetization switching currents and high spin-orbit torque efficiencies. These LAFO films on MGO thus combine all of the desirable properties of ferromagnetic insulators with perpendicular magnetic anisotropy, opening new possibilities for spin based electronics.
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http://dx.doi.org/10.1038/s41467-023-40733-9 | DOI Listing |
Nano Lett
January 2025
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Realizing field-free switching of perpendicular magnetization by spin-orbit torques is crucial for developing advanced magnetic memory and logic devices. However, existing methods often involve complex designs or hybrid approaches, which complicate fabrication and affect device stability and scalability. Here, we propose a novel approach using -polarized spin currents for deterministic switching of perpendicular magnetization through interfacial engineering.
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January 2025
Center of Free Electron Laser & High Magnetic Field, Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D FeGaTe (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K.
View Article and Find Full Text PDFPhys Chem Chem Phys
January 2025
Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha No 10, Bandung 40132, Jawa Barat, Indonesia.
The magnetic, electronic, and topological properties of GdPtBi were systematically investigated using first-principles density functional theory (DFT) calculations. Various magnetic configurations were examined, including ferromagnetic (FM) and antiferromagnetic (AFM) states, with particular focus on AFM states where the Gd magnetic moments align either parallel (AFM) or perpendicular (AFM) to the [111] crystal direction. For AFM, the in-plane angles were varied at = 0°, 15°, and 30° (denoted as AFM, AFM, and AFM, respectively).
View Article and Find Full Text PDFSci Adv
January 2025
Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001, USA.
Superconducting spintronics explores the interplay between superconductivity and magnetism, sparking substantial interest in nonunitary superconductors as a platform for magneto-superconducting phenomena. However, identifying nonunitary superconductors remains challenging. We demonstrate that spin current driven by thermal gradients sensitively probes the nature of the condensate in nonunitary superconductors.
View Article and Find Full Text PDFSci Rep
January 2025
INFN-Laboratori Nazionali di Frascati, Via E. Fermi, 54, 00044, Frascati, Italy.
We analytically solve the Landau-Lifshitz equations for the collective magnetization dynamics in a synthetic antiferromagnet (SAF) nanoparticle and uncover a regime of barrier-free switching under a short small-amplitude magnetic field pulse applied perpendicular to the SAF plane. We give examples of specific implementations for forming such low-power and ultra-fast switching pulses. For fully optical, resonant, barrier-free SAF switching we estimate the power per write operation to be pJ, 10-100 times smaller than for conventional quasi-static rotation, which should be attractive for memory applications.
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