Advancements in photovoltaic research suggest that tin-based perovskites are potential alternatives to traditional lead-based structures. CsSnI, specifically, stands out as a notable candidate, exhibiting impressive performance. However, its complete potential remains untapped primarily owing to the limited understanding of its photophysics. In light of this, this study aims to bridge this knowledge gap. To commence our study, we first executed theoretical investigations to locate the energetically diverse excitons within the Brillouin zone. Building on this knowledge, we then utilized transient absorption spectroscopy to investigate their temporal evolution. Herein, we observed the formation of high-energy excitons even when the incident photon energy was below the necessary threshold, which is quite distinctive and intriguing. Of particular interest is the generation of ultraviolet (UV) domain exciton using visible photons, which implies that CsSnI has the potential for efficient solar light harvesting. Tracking the kinetics revealed that this unique finding arises due to the intertwined formation and decay pathways undertaken by the different excitons, aided by intervalley scattering and phonon absorption processes. In addition, we found that the decay of the UV exciton was unusually slow. Transient mobility investigations were undertaken to probe the carrier transport behavior that further established hot carriers (HCs) in CsSnI to be highly mobile and susceptible to polaron formation. Overall, our findings demonstrate that CsSnI is a strong candidate for HC-based photovoltaics because it possesses all the prerequisites desired for such applications.
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http://dx.doi.org/10.1039/d3nr02342g | DOI Listing |
Luminescence
January 2025
Department of Electronics and Communication Engineering, Madan Mohan Malaviya University of Technology, Gorakhpur, Uttar Pradesh, India.
This study focuses on enhancing the performance of photodetector through the utilization of inorganic perovskite material. It emphasizes that the unique properties of perovskite materials contribute to the superior performance of the photodetector. The focus is on the design and enhancement of CsSnI-based photodetector having graphene oxide (GO) and PCBM as charge transport layer, analysing their potential for improved operation.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
School of Engineering and Materials Science, Queen Mary University of London, Mile End Road, London E1 4NS, U.K.
Adv Mater
December 2024
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
Metal halide perovskites have shown exceptionally slow hot-carrier cooling, which has been attributed to various physical mechanisms without reaching a consensus. Here, experiment and theory are combined to unveil the carrier cooling process in formamidinium (FA) and caesium (Cs) tin triiodide thin films. Through impulsive vibrational spectroscopy and molecular dynamics, much shorter phonon dephasing times of the hybrid perovskite, which accounts for the larger blueshift in the photoluminescence seen at high excitation density for FASnI compared to CsSnI is reported.
View Article and Find Full Text PDFACS Nano
December 2024
Material Science and Engineering Program (MSE), Physical Sciences and Engineering Division (PSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia.
The quantum-dot-in-perovskite matrix (DIM) is an emerging class of semiconductors for optoelectronics enabled by their complementary charge transport properties and stability improvements. However, a detailed understanding of the pure electrical properties in DIM is still in its early stage. Here, we developed PbS quantum dot-in-CsSnI matrix solids exhibiting improved electrical properties and enhanced stability.
View Article and Find Full Text PDFChem Mater
November 2024
Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 3, 9747 AG Groningen, The Netherlands.
Tin halide perovskites are promising for optoelectronics, although their sensitivity to ambient conditions due to Sn(II) oxidation presents a challenge. Encapsulation techniques can mitigate degradation and facilitate advanced studies of the intrinsic properties. To study and improve the ambient stability of CsSnBr and CsSnI nanocrystal (NC) thin films, we explored various encapsulation methods: organic, inorganic, and hybrid.
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