The effect of multilayering YBaCuO6+x(YBCO) thin films with sequentially deposited CeOlayers between YBCO layers grown on buffered metallic template is investigated to optimize the self-field critical current densityJc(0). We have obtained that the improvement inJc(0)clearly depends on the YBCO layer thickness and temperature, where at high temperatureJc(0)can be increased even 50% when compared with the single layer YBCO films. Based on our experimental results and theoretical approach to the growth mechanism during multilayer deposition, we have defined a critical thickness for the YBCO layer, where the maximal self-fieldJc(0)is strongly related to the competing issues between the uniform and nonuniform strain relaxation and the formation of dislocations and other defects during the film growth. Our results can be directly utilized in the future coated conductor technology, when maximizing the overall in-fieldJc(B)by combining both the optimal crystalline quality and flux pinning properties typically in bilayer film structures.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1088/1361-648X/acee3d | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Buffer-Less Gallium Nitride High Electron Mobility Heterostructures on Silicon.
Adv Mater
January 2025
Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS, UK.
Thick metamorphic buffers are considered indispensable for III-V semiconductor heteroepitaxy on large lattice and thermal-expansion mismatched silicon substrates. However, III-nitride buffers in conventional GaN-on-Si high electron mobility transistors (HEMT) impose a substantial thermal resistance, deteriorating device efficiency and lifetime by throttling heat extraction. To circumvent this, a systematic methodology for the direct growth of GaN after the AlN nucleation layer on six-inch silicon substrates is demonstrated using metal-organic vapor phase epitaxy (MOVPE).
View Article and Find Full Text PDFSelective area molecular beam epitaxy of InSb on InP(111): from thin films to quantum nanostructures.
Nanotechnology
January 2025
University Lille, CNRS, Centrale Lille, ISEN, University Valenciennes, UMR 8520-IEMN, F-59000 Lille, France.
InSb is a material of choice for infrared as well as spintronic devices but its integration on large lattice mismatched semi-insulating III-V substrates has so far altered its exceptional properties. Here, we investigate the direct growth of InSb on InP(111)substrates with molecular beam epitaxy. Despite the lack of a thick metamorphic buffer layer for accommodation, we show that quasi-continuous thin films can be grown using a very high Sb/In flux ratio.
View Article and Find Full Text PDFConfined CVD Synthesis and Temperature-Dependent Spectroscopic Properties of Bilayer Graphene Ribbon Arrays with Bifunctional Modulation of Adhesion Metal.
Small Methods
January 2025
School of Chemistry and Chemical Engineering, Chongqing University, Chongqing, 401331, China.
Bilayer graphene ribbons (GRs) hold great promise for the fabrication of next-generation nanodevices, thanks to unparalleled electronic properties, especially the tunable bandgap in association with twist angle, ribbon width, edge structure, and interlayer coupling. A common challenge in manufacturing bilayer GRs via templated chemical vapor deposition (CVD) approach is uncontrollable dewetting of micro- and nano-scaled patterned metal substrates. Herein, a confined CVD synthetic strategy of bilayer GR arrays is proposed, by utilizing the bifunctional Ni as a buffered adhesion layer to regulate the anisotropic dewetting of metal film in the V-groove and as a carbon-dissolution regulated metal to initiate the bilayer nucleation.
View Article and Find Full Text PDF750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers.
Micromachines (Basel)
November 2024
Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, China.
In this work, we demonstrated the epitaxial growth of a gallium nitride (GaN) buffer structure on 200 mm SOI (silicon-on-insulator) substrates. This epitaxial layer is grown using a reversed stepped superlattice buffer (RSSL), which is composed of two superlattice (SL) layers with different Al component ratios stacked in reverse order. The upper layer, with a higher Al component ratio, introduces tensile stress instead of accumulative compressive stress and reduces the in situ curvature of the wafer, thereby achieving a well-controlled wafer bow ≤ ±50 µm for a 3.
View Article and Find Full Text PDFA 3D Carbon Architecture Encapsulation Strategy for Boosting the Performance of Nickel Disulfide as an Anode for Sodium-Ion Batteries.
Molecules
December 2024
School of Biological and Chemical Engineering, Nanyang Institute of Technology, Nanyang 473004, China.
Nickel disulfide (NiS) nanoparticles are encapsulated within nitrogen and sulfur co-doped carbon nanosheets, which are grown onto carbon nanofibers to form an array structure (NiS/C@CNF), resulting in a self-supporting film. This encapsulated structure not only prevents the agglomeration of NiS nanoparticles, but also memorably buffers its volume changes during charge/discharge cycles, thereby maintaining structural integrity. The nitrogen and sulfur co-doping enhances electronic conductivity and facilitates the faster ion transport of the carbon backbone, improving the low conductivity of the NiS/C@CNF anodes.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!