Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 10 Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.
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http://dx.doi.org/10.34133/research.0202 | DOI Listing |
Chemistry
December 2024
East China University of Science and Technology, School of Materials Science and Engineering, meilong Road, 200237, shanghai, CHINA.
Perovskite-based photodetectors (PDs) are broadly utilized in optical communication, non-destructive testing, and smart wearable devices due to their ability to convert light into electrical signals. However, toxicity and instability hold back their mass production and commercialization. The lead-free Cs2AgBiBr6 double perovskite film, promised to be an alternative, is fabricated by electrophoretic deposition (EPD), which compromises film quality.
View Article and Find Full Text PDFSmall
December 2024
State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
Broadband detection technology is crucial in the fields of astronomy and environmental surveying. Two dimensional (2D) materials have emerged as promising candidates for next-generation broadband photodetectors with the characteristics of high integration, multi-dimensional sensing, and low power consumption. Among these, 2D tellurium (Te) is particularly noteworthy due to its excellent mobility, tunable bandgap, and air stability.
View Article and Find Full Text PDFACS Appl Mater Interfaces
December 2024
Key Laboratory of Engineering Dielectric and Applications (Ministry of Education), School of Electrical and Electronic Engineering, Harbin University of Science and Technology, Harbin 150080, China.
Fast-response photodetectors have attracted considerable attention in the application of high-speed communication, real-time monitoring, and optical imaging systems. However, most reported photodetectors suffer from limitations of the inherent properties of materials, low carrier transport efficiency, and unmatched interfaces, which lead to a low response speed. Here, we report a WS/graphene/MoS vertical van der Waals heterojunction fabricated by mechanical exfoliation and dry transfer methods for fast response.
View Article and Find Full Text PDFNanoscale
December 2024
Department of Electronic and Electrical Engineering, Southern University of Science and Technology, Shenzhen, 518055, China.
Short-wave infrared (SWIR) photodetectors (PDs) have a wide range of applications in the field of information and communication. Especially in recent years, with the increasing demand for consumer electronics, conventional semiconductor-based PDs alone are unable to cope with the ever-increasing market. Colloidal quantum dots (QDs) have attracted great interest due to their low fabrication cost, solution processability, and promising optoelectronic properties.
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December 2024
Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
The development of high-performance Sn-based perovskite photodetectors is presented with double-sided passivation using large alkylammonium interlayers of PEAI and BDAI₂. This dual passivation strategy, applied to the top and bottom of FASnI₃ films, effectively improves film quality by reducing defect density, enhancing carrier mobility, and minimizing non-radiative energy losses at the interfaces. At 720 nm, the photodetectors demonstrate a responsivity of 0.
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